Open Access System for Information Sharing

Login Library

 

Article
Cited 25 time in webofscience Cited 28 time in scopus
Metadata Downloads
Full metadata record
Files in This Item:
DC FieldValueLanguage
dc.contributor.authorCho, JH-
dc.contributor.authorKang, MH-
dc.date.accessioned2015-06-25T03:00:42Z-
dc.date.available2015-06-25T03:00:42Z-
dc.date.created2009-03-13-
dc.date.issued2000-01-15-
dc.identifier.issn1098-0121-
dc.identifier.other2015-OAK-0000001204en_US
dc.identifier.urihttps://oasis.postech.ac.kr/handle/2014.oak/12053-
dc.description.abstractGe-Si intermixing at the Ge/Si(001) surface is studied for 0.5-ML and 1-ML Ge coverages by using pseudopotential density-functional theory. We calculate the total energies of various Ge-Si intermixing configurations and estimate the possibility of Ge interdiffusion in the thermodynamic regime. We find that, while most of Ge atoms stay in the surface layer at room temperature, Ge interdiffusion tends to increase with temperature. Our results not only provide a quantitative understanding of recent experimental observations of high-temperature Ge interdiffusion at the Ge/Si(001) surface, but also demonstrate that there is a strong "site selectivity" of Ge arising from the dimerized surface reconstruction.-
dc.description.statementofresponsibilityopenen_US
dc.languageEnglish-
dc.publisherAMERICAN PHYSICAL SOC-
dc.relation.isPartOfPHYSICAL REVIEW B-
dc.rightsBY_NC_NDen_US
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/2.0/kren_US
dc.titleGe-Si intermixing at the Ge/Si(001) surface-
dc.typeArticle-
dc.contributor.college물리학과en_US
dc.identifier.doi10.1103/PhysRevB.61.1688-
dc.author.googleCho, JHen_US
dc.author.googleKang, MHen_US
dc.relation.volume61en_US
dc.relation.issue3en_US
dc.relation.startpage1688en_US
dc.relation.lastpage1691en_US
dc.contributor.id10105469en_US
dc.relation.journalPHYSICAL REVIEW Ben_US
dc.relation.indexSCI급, SCOPUS 등재논문en_US
dc.relation.sciSCIen_US
dc.collections.nameJournal Papersen_US
dc.type.rimsART-
dc.identifier.bibliographicCitationPHYSICAL REVIEW B, v.61, no.3, pp.1688 - 1691-
dc.identifier.wosid000085760200015-
dc.date.tcdate2019-01-01-
dc.citation.endPage1691-
dc.citation.number3-
dc.citation.startPage1688-
dc.citation.titlePHYSICAL REVIEW B-
dc.citation.volume61-
dc.contributor.affiliatedAuthorKang, MH-
dc.identifier.scopusid2-s2.0-0001044603-
dc.description.journalClass1-
dc.description.journalClass1-
dc.description.wostc24-
dc.type.docTypeArticle-
dc.subject.keywordPlusSTRANSKI-KRASTANOV GROWTH-
dc.subject.keywordPlusSI(001)-
dc.subject.keywordPlusPSEUDOPOTENTIALS-
dc.subject.keywordPlusSUPERLATTICES-
dc.subject.keywordPlusINTERFACES-
dc.subject.keywordPlusSTATE-
dc.subject.keywordPlusFILMS-
dc.relation.journalWebOfScienceCategoryMaterials Science, Multidisciplinary-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.relation.journalWebOfScienceCategoryPhysics, Condensed Matter-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaMaterials Science-
dc.relation.journalResearchAreaPhysics-

qr_code

  • mendeley

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

Related Researcher

Views & Downloads

Browse