DC Field | Value | Language |
---|---|---|
dc.contributor.author | Shim, Joonsup | - |
dc.contributor.author | Lim, Jinha | - |
dc.contributor.author | Kim, Inki | - |
dc.contributor.author | Kim, Seong Kwang | - |
dc.contributor.author | Ahn, Seung-Yeop | - |
dc.contributor.author | Park, Juhyuk | - |
dc.contributor.author | Jeong, Jaeyong | - |
dc.contributor.author | Kim, Bong Ho | - |
dc.contributor.author | Lee, Seunghyeon | - |
dc.contributor.author | An, Jihwan | - |
dc.contributor.author | Geum, Dae-Myeong | - |
dc.contributor.author | Kim, SangHyeon | - |
dc.date.accessioned | 2024-03-04T07:44:15Z | - |
dc.date.available | 2024-03-04T07:44:15Z | - |
dc.date.created | 2024-03-04 | - |
dc.date.issued | 2023-12-09 | - |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/120751 | - |
dc.description.abstract | We propose a novel concept of an uncooled waveguide-integrated bolometer on a Ge-on-insulator (Ge-OI) platform at mid-infrared (MIR) wavelength of 4.18 µm. To induce heat generation, we introduce a heavily-doped (p+) Ge that utilizes the mechanism of free-carrier absorption (FCA) in Ge. A bolometric material of H2 plasma-treated TiO2 film is integrated to facilitate highly efficient thermal-to-electrical conversion. The fabricated waveguide-integrated bolometer exhibits outstanding performance characteristics in the temperature coefficient of resistance (TCR) of - 1.911 %/K and a sensitivity of -22.25 %/mW at room temperature. Our proposed detector offers full complementary metal-oxide-semiconductor (CMOS) compatibility and features a remarkably simple device configuration. Moreover, due to its FCA-induced heating, we anticipate that our approach can cover the entire MIR regime without performance degradation. This work experimentally demonstrates a room-temperature waveguide-integrated bolometer operating beyond 4 µm, for the first time to our knowledge, paving the way towards the development of a fully integrated photonic platform capable of operating in the ultra-wide MIR spectral region. © 2023 IEEE. | - |
dc.language | English | - |
dc.publisher | IEEE | - |
dc.relation.isPartOf | 2023 International Electron Devices Meeting (IEDM) | - |
dc.relation.isPartOf | 2023 International Electron Devices Meeting (IEDM) | - |
dc.title | Fully CMOS-Compatible Room-Temperature Waveguide-Integrated Bolometer Based on Germanium-on-Insulator Platform at Mid-Infrared Operating Beyond 4 μm | - |
dc.type | Conference | - |
dc.type.rims | CONF | - |
dc.identifier.bibliographicCitation | 2023 International Electron Devices Meeting (IEDM) | - |
dc.citation.conferenceDate | 2023-12-09 | - |
dc.citation.conferencePlace | US | - |
dc.citation.title | 2023 International Electron Devices Meeting (IEDM) | - |
dc.contributor.affiliatedAuthor | An, Jihwan | - |
dc.identifier.scopusid | 2-s2.0-85185610314 | - |
dc.description.journalClass | 2 | - |
dc.description.journalClass | 2 | - |
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