DC Field | Value | Language |
---|---|---|
dc.contributor.author | OH, SEUNGYEOL | - |
dc.contributor.author | JANG, HO JUNG | - |
dc.contributor.author | Hwang Hyunsang | - |
dc.date.accessioned | 2024-03-05T01:22:50Z | - |
dc.date.available | 2024-03-05T01:22:50Z | - |
dc.date.created | 2024-03-04 | - |
dc.date.issued | 2024-01 | - |
dc.identifier.issn | 0741-3106 | - |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/120810 | - |
dc.description.abstract | This study evaluates HfxZr1-xO2 (HZO)-based high-k dielectrics, where dielectric constant (k) is significantly enhanced through structural engineering. The investigation focuses on their dielectric characteristics by pulse operation for DRAM applications. HZO/ZrO2 (HZZ) films with different superlattice structures display different dielectric behaviors, including ferroelectricity, morphotropic phase boundary (MPB), and anti-ferroelectricity. The HZZ film at the MPB condition exhibits exceptionally high k value of 62 even at voltage of 1 V, which is attributed to the abundance of phase boundaries facilitating phase transition in the superlattice structure. Conversely, the HZZ films with ferroelectric and anti-ferroelectric properties exhibit lower-than-expected k values compared to capacitance measurement, due to overestimation caused by polarization switching. Furthermore, the HZZ film at the MPB condition demonstrates robust endurance above 10(12) cycles (k>45 @10(15) cycles, extrapolation). These findings highlight the potential of HZZ films at the MPB to replace conventional DRAM capacitors, offering superior dielectric properties. | - |
dc.language | English | - |
dc.publisher | Institute of Electrical and Electronics Engineers | - |
dc.relation.isPartOf | IEEE Electron Device Letters | - |
dc.title | Accurate Evaluation of High-k HZO/ZrO2 Films by Morphotropic Phase Boundary | - |
dc.type | Article | - |
dc.identifier.doi | 10.1109/LED.2023.3331001 | - |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | IEEE Electron Device Letters, v.45, no.1, pp.28 - 31 | - |
dc.identifier.wosid | 001134459600005 | - |
dc.citation.endPage | 31 | - |
dc.citation.number | 1 | - |
dc.citation.startPage | 28 | - |
dc.citation.title | IEEE Electron Device Letters | - |
dc.citation.volume | 45 | - |
dc.contributor.affiliatedAuthor | OH, SEUNGYEOL | - |
dc.contributor.affiliatedAuthor | JANG, HO JUNG | - |
dc.contributor.affiliatedAuthor | Hwang Hyunsang | - |
dc.identifier.scopusid | 2-s2.0-85177050127 | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.type.docType | Article | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
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