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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | MOSTAFA, HABIBI | - |
| dc.contributor.author | JANG, HO JUNG | - |
| dc.contributor.author | Azaripour Masouleh, Pendar | - |
| dc.contributor.author | LEE, KYUMIN | - |
| dc.contributor.author | OH, SEUNGYEOL | - |
| dc.contributor.author | HWANG, HYUNSANG | - |
| dc.date.accessioned | 2024-03-05T09:00:38Z | - |
| dc.date.available | 2024-03-05T09:00:38Z | - |
| dc.date.created | 2024-03-04 | - |
| dc.date.issued | 2024-01-26 | - |
| dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/120997 | - |
| dc.language | English | - |
| dc.publisher | 포항공대, 한국반도체산업협회, 한국반도체연구조합 | - |
| dc.relation.isPartOf | 제 31회 한국반도체학술대회 | - |
| dc.title | Reliable HZO (0.5) Based Ferroelectric Memory with Ultra-low Operation Voltage of 1.1V by Synergy Effect of Thickness Scaling and Microwave Annealing | - |
| dc.type | Conference | - |
| dc.type.rims | CONF | - |
| dc.identifier.bibliographicCitation | 제 31회 한국반도체학술대회 | - |
| dc.citation.conferenceDate | 2024-01-24 | - |
| dc.citation.conferencePlace | KO | - |
| dc.citation.title | 제 31회 한국반도체학술대회 | - |
| dc.contributor.affiliatedAuthor | MOSTAFA, HABIBI | - |
| dc.contributor.affiliatedAuthor | JANG, HO JUNG | - |
| dc.contributor.affiliatedAuthor | Azaripour Masouleh, Pendar | - |
| dc.contributor.affiliatedAuthor | LEE, KYUMIN | - |
| dc.contributor.affiliatedAuthor | OH, SEUNGYEOL | - |
| dc.contributor.affiliatedAuthor | HWANG, HYUNSANG | - |
| dc.description.journalClass | 2 | - |
| dc.description.journalClass | 2 | - |
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Related Researcher
- 황현상HWANG, HYUNSANG
- Dept of Materials Science & Enginrg