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dc.contributor.authorKIM, JUHEE-
dc.contributor.authorCHOI, JUN YOUNG-
dc.contributor.authorSEUNGKUN, KIM-
dc.contributor.authorKWAK, HYUNJEONG-
dc.contributor.authorKIM, SEYOUNG-
dc.date.accessioned2024-03-05T09:02:18Z-
dc.date.available2024-03-05T09:02:18Z-
dc.date.created2024-03-04-
dc.date.issued2024-01-25-
dc.identifier.urihttps://oasis.postech.ac.kr/handle/2014.oak/121001-
dc.languageEnglish-
dc.publisher포항공대, 한국반도체산업협회, 한국반도체연구조합-
dc.relation.isPartOf제 31회 한국반도체학술대회-
dc.titleInvestigation of Contact Resistance between WOx Channel and Metal Electrodes in Electrochemical Random-Access Memory-
dc.typeConference-
dc.type.rimsCONF-
dc.identifier.bibliographicCitation제 31회 한국반도체학술대회-
dc.citation.conferenceDate2024-01-24-
dc.citation.conferencePlaceKO-
dc.citation.title제 31회 한국반도체학술대회-
dc.contributor.affiliatedAuthorKIM, JUHEE-
dc.contributor.affiliatedAuthorCHOI, JUN YOUNG-
dc.contributor.affiliatedAuthorSEUNGKUN, KIM-
dc.contributor.affiliatedAuthorKWAK, HYUNJEONG-
dc.contributor.affiliatedAuthorKIM, SEYOUNG-
dc.description.journalClass2-
dc.description.journalClass2-

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