Conference
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | LAE, YONG JUNG | - |
| dc.contributor.author | JANGSEOP, LEE | - |
| dc.contributor.author | OH, SEUNGYEOL | - |
| dc.contributor.author | Hwang, Hyunsang | - |
| dc.date.accessioned | 2024-03-05T09:04:32Z | - |
| dc.date.available | 2024-03-05T09:04:32Z | - |
| dc.date.created | 2024-03-04 | - |
| dc.date.issued | 2023-12-12 | - |
| dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/121006 | - |
| dc.description.abstract | We present excellent nonvolatile memoiy characteristics using an ultra-thin Hf | - |
| dc.language | English | - |
| dc.publisher | Institute of Electrical and Electronics Engineers Inc. | - |
| dc.relation.isPartOf | 2023 International Electron Devices Meeting, IEDM 2023 | - |
| dc.relation.isPartOf | Technical Digest - International Electron Devices Meeting, IEDM | - |
| dc.title | Superior retention (>1 year, 85 °C) and memory window (~1.8 V) using ultra-thin HZO FTJ with OTS selector for X-point memory applications | - |
| dc.type | Conference | - |
| dc.type.rims | CONF | - |
| dc.identifier.bibliographicCitation | 2023 International Electron Devices Meeting, IEDM 2023 | - |
| dc.citation.conferenceDate | 2023-12-09 | - |
| dc.citation.conferencePlace | US | - |
| dc.citation.title | 2023 International Electron Devices Meeting, IEDM 2023 | - |
| dc.contributor.affiliatedAuthor | LAE, YONG JUNG | - |
| dc.contributor.affiliatedAuthor | JANGSEOP, LEE | - |
| dc.contributor.affiliatedAuthor | OH, SEUNGYEOL | - |
| dc.contributor.affiliatedAuthor | Hwang, Hyunsang | - |
| dc.description.journalClass | 1 | - |
| dc.description.journalClass | 1 | - |
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Related Researcher
- 황현상HWANG, HYUNSANG
- Dept of Materials Science & Enginrg