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Cited 51 time in webofscience Cited 56 time in scopus
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dc.contributor.authorPark, J-
dc.contributor.authorOh, SJ-
dc.contributor.authorPark, JH-
dc.contributor.authorKim, DM-
dc.contributor.authorEom, CB-
dc.date.accessioned2015-06-25T03:03:17Z-
dc.date.available2015-06-25T03:03:17Z-
dc.date.created2009-02-28-
dc.date.issued2004-02-
dc.identifier.issn1098-0121-
dc.identifier.other2015-OAK-0000004114en_US
dc.identifier.urihttps://oasis.postech.ac.kr/handle/2014.oak/12128-
dc.description.abstractElectronic structures of epitaxial (Sr,Ca)RuO3 thin films are studied by photoemission and x-ray absorption spectroscopy using synchrotron radiation. The Ru 4d spectral weights obtained by utilizing the Cooper minimum phenomena of photoionization cross-section reveal a strong mixing between Ru 4d and O 2p states as well as the signature of electron correlation effect near the Fermi level in both SrRuO3 and CaRuO3. However the electron correlation effect seems more important in CaRuO3 than SrRuO3. The detailed shapes of the valence band are found to depend on the sample cleaning methods, where the single-crystalline films cleaned by in situ annealing show more enhanced structures in the spectra than the scraped polycrystalline samples.-
dc.description.statementofresponsibilityopenen_US
dc.languageEnglish-
dc.publisherAMERICAN PHYSICAL SOC-
dc.relation.isPartOfPHYSICAL REVIEW B-
dc.rightsBY_NC_NDen_US
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/2.0/kren_US
dc.titleElectronic structure of epitaxial (Sr,Ca)RuO3 films studied by photoemission and x-ray absorption spectroscopy-
dc.typeArticle-
dc.contributor.college물리학과en_US
dc.identifier.doi10.1103/PhysRevB.69.085108-
dc.author.googlePark, Jen_US
dc.author.googleOh, SJen_US
dc.author.googleEom, CBen_US
dc.author.googleKim, DMen_US
dc.author.googlePark, JHen_US
dc.relation.volume69en_US
dc.relation.issue8en_US
dc.contributor.id10080407en_US
dc.relation.journalPHYSICAL REVIEW Ben_US
dc.relation.indexSCI급, SCOPUS 등재논문en_US
dc.relation.sciSCIen_US
dc.collections.nameJournal Papersen_US
dc.type.rimsART-
dc.identifier.bibliographicCitationPHYSICAL REVIEW B, v.69, no.8-
dc.identifier.wosid000220185100025-
dc.date.tcdate2019-01-01-
dc.citation.number8-
dc.citation.titlePHYSICAL REVIEW B-
dc.citation.volume69-
dc.contributor.affiliatedAuthorPark, JH-
dc.identifier.scopusid2-s2.0-1842427446-
dc.description.journalClass1-
dc.description.journalClass1-
dc.description.wostc47-
dc.type.docTypeArticle-
dc.subject.keywordPlusSRRUO3 THIN-FILMS-
dc.subject.keywordPlusCROSS-SECTIONS-
dc.subject.keywordPlusTHERMODYNAMIC PROPERTIES-
dc.subject.keywordPlusOXIDE SRRUO3-
dc.subject.keywordPlusMETAL-
dc.subject.keywordPlusTRANSITION-
dc.subject.keywordPlusINSULATOR-
dc.subject.keywordPlusGROWTH-
dc.subject.keywordPlusPHOTOIONIZATION-
dc.subject.keywordPlusCONDUCTIVITY-
dc.relation.journalWebOfScienceCategoryMaterials Science, Multidisciplinary-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.relation.journalWebOfScienceCategoryPhysics, Condensed Matter-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaMaterials Science-
dc.relation.journalResearchAreaPhysics-

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