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Cited 7 time in webofscience Cited 8 time in scopus
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dc.contributor.authorJeong, S-
dc.contributor.authorLee, JY-
dc.contributor.authorKang, MH-
dc.date.accessioned2015-06-25T03:03:23Z-
dc.date.available2015-06-25T03:03:23Z-
dc.date.created2009-03-13-
dc.date.issued2005-11-
dc.identifier.issn1098-0121-
dc.identifier.other2015-OAK-0000005544en_US
dc.identifier.urihttps://oasis.postech.ac.kr/handle/2014.oak/12131-
dc.description.abstractAtomic and electronic structure of the Ca/Si(111)2x1 surface has been studied by density functional theory calculations. The Seiwatz chain structure with Ca adsorbed on the T-4 site, suggested in previous experiments, is found to be the most stable among the structural models considered. This Seiwatz-T-4 model produces a semiconducting surface band structure: Two filled and one empty surface-state bands are found in the gap originating from the Si dangling-bond states on the Seiwatz chain and the Ca 4s states, respectively, which indicates a complete charge transfer from Ca to the Si surface. The calculated band dispersions agree well with photoemission data, but the simulated scanning tunneling microscopy images, empty-state images of bright stripes representing the one-dimensional Ca chains, and filled-state images of hexagonal lobes representing the Si dangling bonds, partly differ from experimental images of only bright stripes for both empty and filled states.-
dc.description.statementofresponsibilityopenen_US
dc.languageEnglish-
dc.publisherAMERICAN PHYSICAL SOC-
dc.relation.isPartOfPHYSICAL REVIEW B-
dc.rightsBY_NC_NDen_US
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/2.0/kren_US
dc.titleFirst-principles investigation of the Ca/Si(111)2x1 surface-
dc.typeArticle-
dc.contributor.college물리학과en_US
dc.identifier.doi10.1103/PhysRevB.72.193309-
dc.author.googleJeong, Sen_US
dc.author.googleLee, JYen_US
dc.author.googleKang, MHen_US
dc.relation.volume72en_US
dc.relation.issue19en_US
dc.relation.startpage193309en_US
dc.relation.lastpage193310en_US
dc.contributor.id10105469en_US
dc.relation.journalPHYSICAL REVIEW Ben_US
dc.relation.indexSCI급, SCOPUS 등재논문en_US
dc.relation.sciSCIen_US
dc.collections.nameJournal Papersen_US
dc.type.rimsART-
dc.identifier.bibliographicCitationPHYSICAL REVIEW B, v.72, no.19, pp.193309 - 193310-
dc.identifier.wosid000233603700018-
dc.date.tcdate2019-01-01-
dc.citation.endPage193310-
dc.citation.number19-
dc.citation.startPage193309-
dc.citation.titlePHYSICAL REVIEW B-
dc.citation.volume72-
dc.contributor.affiliatedAuthorKang, MH-
dc.identifier.scopusid2-s2.0-29744455563-
dc.description.journalClass1-
dc.description.journalClass1-
dc.description.wostc5-
dc.type.docTypeArticle-
dc.subject.keywordPlusELECTRONIC-STRUCTURE-
dc.subject.keywordPlusX-2) SURFACE-
dc.subject.keywordPlusSI(111)-
dc.subject.keywordPlusRECONSTRUCTION-
dc.subject.keywordPlusPSEUDOPOTENTIALS-
dc.subject.keywordPlusMICROSCOPY-
dc.subject.keywordPlusADSORPTION-
dc.subject.keywordPlusWAVE-
dc.subject.keywordPlusMG-
dc.relation.journalWebOfScienceCategoryMaterials Science, Multidisciplinary-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.relation.journalWebOfScienceCategoryPhysics, Condensed Matter-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaMaterials Science-
dc.relation.journalResearchAreaPhysics-

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