Conference
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | HAE, WON LEE | - |
| dc.contributor.author | KIM, SOYOUNG | - |
| dc.contributor.author | 이호인 | - |
| dc.contributor.author | LEE, YONGSU | - |
| dc.contributor.author | SEUNG, MO KIM | - |
| dc.contributor.author | 황현준 | - |
| dc.contributor.author | LEE, BYOUNG HUN | - |
| dc.date.accessioned | 2024-03-06T01:19:13Z | - |
| dc.date.available | 2024-03-06T01:19:13Z | - |
| dc.date.created | 2024-02-21 | - |
| dc.date.issued | 2023-03-09 | - |
| dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/121376 | - |
| dc.publisher | IEEE | - |
| dc.relation.isPartOf | Electron Devices Technology and Manufacturing(EDTM) Confernce 2023 | - |
| dc.title | Electrical characteristics of sub-5 nm SnO2 deposited using Atomic Layer Infiltration (ALI) process | - |
| dc.type | Conference | - |
| dc.type.rims | CONF | - |
| dc.identifier.bibliographicCitation | Electron Devices Technology and Manufacturing(EDTM) Confernce 2023 | - |
| dc.citation.conferenceDate | 2023-03-07 | - |
| dc.citation.conferencePlace | KO | - |
| dc.citation.title | Electron Devices Technology and Manufacturing(EDTM) Confernce 2023 | - |
| dc.contributor.affiliatedAuthor | HAE, WON LEE | - |
| dc.contributor.affiliatedAuthor | KIM, SOYOUNG | - |
| dc.contributor.affiliatedAuthor | 이호인 | - |
| dc.contributor.affiliatedAuthor | LEE, YONGSU | - |
| dc.contributor.affiliatedAuthor | SEUNG, MO KIM | - |
| dc.contributor.affiliatedAuthor | 황현준 | - |
| dc.contributor.affiliatedAuthor | LEE, BYOUNG HUN | - |
| dc.description.journalClass | 1 | - |
| dc.description.journalClass | 1 | - |
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Related Researcher
- 황현준HWANG, HYEON JUN
- Dept of Electrical Enginrg