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Spin polarization amplification within nonmagnetic semiconductors at room temperature SCIE SCOPUS

Title
Spin polarization amplification within nonmagnetic semiconductors at room temperature
Authors
Soon-Wook JungLee, HW
Date Issued
2006-04
Publisher
AMERICAN PHYSICAL SOC
Abstract
We demonstrate theoretically that the spin polarization of currents can be electrically amplified within nonmagnetic semiconductors by exploiting the fact that the spin current, compared to the charge current, is weakly perturbed by electric driving forces. As a specific example, we consider a T-shaped current branching geometry made entirely of a nonmagnetic semiconductor, where the current is injected into one of the branches (input branch) and splits into the other two branches (output branches). We show that when the input current has a moderate spin polarization, the spin polarization in one of the output branches can be higher than the spin polarization in the input branch and may reach 100% when the relative magnitudes of current-driving electric fields in the two output branches are properly tuned. The proposed amplification scheme does not use ferromagnets or magnetic fields, and does not require a low temperature operation; providing an efficient way to generate a highly spin polarized current in nonmagnetic semiconductors at room temperature.
URI
https://oasis.postech.ac.kr/handle/2014.oak/12159
DOI
10.1103/PhysRevB.73.165302
ISSN
1098-0121
Article Type
Article
Citation
PHYSICAL REVIEW B, vol. 73, no. 16, page. 165302 - 165302, 2006-04
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