DC Field | Value | Language |
---|---|---|
dc.contributor.author | Feenstra, RM | - |
dc.contributor.author | Lee, JY | - |
dc.contributor.author | Kang, MH | - |
dc.contributor.author | Meyer, G | - |
dc.contributor.author | Rieder, KH | - |
dc.date.accessioned | 2015-06-25T03:04:32Z | - |
dc.date.available | 2015-06-25T03:04:32Z | - |
dc.date.created | 2009-08-13 | - |
dc.date.issued | 2006-01 | - |
dc.identifier.issn | 1098-0121 | - |
dc.identifier.other | 2015-OAK-0000005666 | en_US |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/12163 | - |
dc.description.abstract | The surface band gap of the Ge(111)c(2x8) surface at low temperature is determined on the basis of scanning tunneling spectroscopy. Electrostatic potential computations permit evaluation of tip-induced band bending, from which a correction to the energy scale of the observed spectra is made. Parameter values in the computations are constrained by comparison of the observed spectrum with known spectral features, including high-lying conduction band features derived from first-principles computations. The surface band gap, lying between the bulk valence band maximum and the minimum of an adatom-induced surface band, is found to have a width of 0.49 +/- 0.03 eV. | - |
dc.description.statementofresponsibility | open | en_US |
dc.language | English | - |
dc.publisher | AMERICAN PHYSICAL SOC | - |
dc.relation.isPartOf | PHYSICAL REVIEW B | - |
dc.rights | BY_NC_ND | en_US |
dc.rights.uri | http://creativecommons.org/licenses/by-nc-nd/2.0/kr | en_US |
dc.title | Band gap of the Ge(111)c(2x8) surface by scanning tunneling spectroscopy | - |
dc.type | Article | - |
dc.contributor.college | 물리학과 | en_US |
dc.identifier.doi | 10.1103/PhysRevB.73.035310 | - |
dc.author.google | Feenstra, RM | en_US |
dc.author.google | Lee, JY | en_US |
dc.author.google | Rieder, KH | en_US |
dc.author.google | Meyer, G | en_US |
dc.author.google | Kang, MH | en_US |
dc.relation.volume | 73 | en_US |
dc.relation.issue | 3 | en_US |
dc.relation.startpage | 35310 | en_US |
dc.relation.lastpage | 35310 | en_US |
dc.contributor.id | 10105469 | en_US |
dc.relation.journal | PHYSICAL REVIEW B | en_US |
dc.relation.index | SCI급, SCOPUS 등재논문 | en_US |
dc.relation.sci | SCI | en_US |
dc.collections.name | Journal Papers | en_US |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | PHYSICAL REVIEW B, v.73, no.3, pp.35310 - 35310 | - |
dc.identifier.wosid | 000235009500098 | - |
dc.date.tcdate | 2019-01-01 | - |
dc.citation.endPage | 35310 | - |
dc.citation.number | 3 | - |
dc.citation.startPage | 35310 | - |
dc.citation.title | PHYSICAL REVIEW B | - |
dc.citation.volume | 73 | - |
dc.contributor.affiliatedAuthor | Kang, MH | - |
dc.identifier.scopusid | 2-s2.0-33144460391 | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.wostc | 40 | - |
dc.type.docType | Article | - |
dc.subject.keywordPlus | ELECTRONIC-STRUCTURE | - |
dc.subject.keywordPlus | SI(111)2X1 SURFACE | - |
dc.subject.keywordPlus | GAAS(110) SURFACE | - |
dc.subject.keywordPlus | MICROSCOPY | - |
dc.subject.keywordPlus | SEMICONDUCTORS | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
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