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Cited 37 time in webofscience Cited 37 time in scopus
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dc.contributor.authorChung, ON-
dc.contributor.authorKim, H-
dc.contributor.authorChung, S-
dc.contributor.authorKoo, JY-
dc.date.accessioned2015-06-25T03:04:34Z-
dc.date.available2015-06-25T03:04:34Z-
dc.date.created2009-03-19-
dc.date.issued2006-01-
dc.identifier.issn1098-0121-
dc.identifier.other2015-OAK-0000005665en_US
dc.identifier.urihttps://oasis.postech.ac.kr/handle/2014.oak/12164-
dc.description.abstractInitial adsorption configurations of NH3 molecules on the Si(001) surface are studied by using scanning tunneling microscopy (STM) and ab initio pseudopotential calculations. In contrast to the previous consensus of single configuration, we demonstrate that there exist two distinct STM features. One is found to be the existing model of on-dimer configuration, that is characterized by the previously unreported "U-shape" empty-state feature. The other is identified to be NH2 and H adsorbed at the same side of two adjacent dimers along the dimer row. The identification of all the adsorption configurations would be useful for the quantitative analysis of Si nitridation.-
dc.description.statementofresponsibilityopenen_US
dc.languageEnglish-
dc.publisherAMERICAN PHYSICAL SOC-
dc.relation.isPartOfPHYSICAL REVIEW B-
dc.rightsBY_NC_NDen_US
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/2.0/kren_US
dc.titleMultiple adsorption configurations of NH3 molecules on the Si(001) surface-
dc.typeArticle-
dc.contributor.college물리학과en_US
dc.identifier.doi10.1103/PhysRevB.73.033303-
dc.author.googleChung, ONen_US
dc.author.googleKim, Hen_US
dc.author.googleKoo, JYen_US
dc.author.googleChung, Sen_US
dc.relation.volume73en_US
dc.relation.issue3en_US
dc.contributor.id10071841en_US
dc.relation.journalPHYSICAL REVIEW Ben_US
dc.relation.indexSCI급, SCOPUS 등재논문en_US
dc.relation.sciSCIen_US
dc.collections.nameJournal Papersen_US
dc.type.rimsART-
dc.identifier.bibliographicCitationPHYSICAL REVIEW B, v.73, no.3-
dc.identifier.wosid000235009500016-
dc.date.tcdate2019-01-01-
dc.citation.number3-
dc.citation.titlePHYSICAL REVIEW B-
dc.citation.volume73-
dc.contributor.affiliatedAuthorChung, S-
dc.identifier.scopusid2-s2.0-33144462397-
dc.description.journalClass1-
dc.description.journalClass1-
dc.description.wostc37-
dc.type.docTypeArticle-
dc.subject.keywordPlusSCANNING TUNNELING MICROSCOPE-
dc.subject.keywordPlusDISSOCIATIVE ADSORPTION-
dc.subject.keywordPlusSI(100) SURFACE-
dc.subject.keywordPlusAMMONIA-
dc.subject.keywordPlusDEFECTS-
dc.subject.keywordPlusSTEPS-
dc.subject.keywordPlusMODEL-
dc.subject.keywordPlusC2H2-
dc.relation.journalWebOfScienceCategoryMaterials Science, Multidisciplinary-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.relation.journalWebOfScienceCategoryPhysics, Condensed Matter-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaMaterials Science-
dc.relation.journalResearchAreaPhysics-

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