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Influence of oxygen vacancies on the electronic structure of HfO2 films SCIE SCOPUS

Title
Influence of oxygen vacancies on the electronic structure of HfO2 films
Authors
Cho, DYLee, JMOh, SJJang, HKim, JYPark, JHTanaka, A
Date Issued
2007-10
Publisher
AMER PHYSICAL SOC
Abstract
We investigated the unoccupied part of the electronic structure of the oxygen-deficient hafnium oxide (HfO similar to 1.8) using soft x-ray absorption spectroscopy at O K and Hf N-3 edges. Band-tail states beneath the unoccupied Hf 5d band are observed in the O K-edge spectra. Combined with ultraviolet photoemission spectrum, this indicates the non-negligible occupation of the Hf 5d state. However, Hf N-3-edge magnetic circular dichroism spectrum reveals the absence of a long-range ferromagnetic spin order in the oxide. Thus, the small amount of d electron gained by the vacancy formation does not show intersite correlation, contrary to a recent paper [M. Venkatesan , Nature 430, 630 (2004)].
URI
https://oasis.postech.ac.kr/handle/2014.oak/12168
DOI
10.1103/PhysRevB.76.165411
ISSN
1098-0121
Article Type
Article
Citation
PHYSICAL REVIEW B, vol. 76, no. 16, 2007-10
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