Highly Linear and Symmetric 2T Synaptic Device Composed of IGZO Transistors by Identical Charging and Discharging Characteristics
- Title
- Highly Linear and Symmetric 2T Synaptic Device Composed of IGZO Transistors by Identical Charging and Discharging Characteristics
- Authors
- SUWON, SEONG; PARK, SEONGMIN; HYUNYOUNG, CHO; CHUNG, YOONYOUNG
- Date Issued
- 2023-03-09
- Publisher
- Institute of Electrical and Electronics Engineers Inc.
- Abstract
- We propose a 2T synaptic device based on indium gallium zinc oxide (IGZO) transistors that linearly and symmetrically updates synaptic weights. The constant charging/discharging current of the write transistor in the saturation region controls the conductance of the read transistor. The proposed synaptic device exhibited outstanding linearity and symmetry, essential for highly accurate neural network systems.
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/122096
- Article Type
- Conference
- Citation
- 7th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2023, 2023-03-09
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- There are no files associated with this item.
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