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Cited 90 time in webofscience Cited 92 time in scopus
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dc.contributor.authorJeong, JS-
dc.contributor.authorLee, HW-
dc.date.accessioned2015-06-25T03:06:15Z-
dc.date.available2015-06-25T03:06:15Z-
dc.date.created2009-11-20-
dc.date.issued2009-08-
dc.identifier.issn1098-0121-
dc.identifier.other2015-OAK-0000019320en_US
dc.identifier.urihttps://oasis.postech.ac.kr/handle/2014.oak/12210-
dc.description.abstractStructure of the spin-orbit coupling varies from material to material and thus finding the correct spin-orbit coupling structure is an important step toward advanced spintronic applications. We show theoretically that the curvature in a carbon nanotube generates two types of the spin-orbit coupling, one of which was not recognized before. In addition to the topological phase-related contribution of the spin-orbit coupling, which appears in the off-diagonal part of the effective Dirac Hamiltonian of carbon nanotubes, there is another contribution that appears in the diagonal part. The existence of the diagonal term can modify spin-orbit coupling effects qualitatively, an example of which is the electron-hole asymmetric spin splitting observed recently, and generate four qualitatively different behavior of energy-level dependence on parallel magnetic field. It is demonstrated that the diagonal term applies to a curved graphene as well. This result should be valuable for spintronic applications of graphitic materials.-
dc.description.statementofresponsibilityopenen_US
dc.languageEnglish-
dc.publisherAMER PHYSICAL SOC-
dc.relation.isPartOfPHYSICAL REVIEW B-
dc.rightsBY_NC_NDen_US
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/2.0/kren_US
dc.titleCurvature-enhanced spin-orbit coupling in a carbon nanotube-
dc.typeArticle-
dc.contributor.college물리학과en_US
dc.identifier.doi10.1103/PhysRevB.80.075409-
dc.author.googleJeong, JSen_US
dc.author.googleLee, HWen_US
dc.relation.volume80en_US
dc.relation.issue7en_US
dc.relation.startpage75409en_US
dc.relation.lastpage75409en_US
dc.contributor.id10084423en_US
dc.relation.journalPHYSICAL REVIEW Ben_US
dc.relation.indexSCI급, SCOPUS 등재논문en_US
dc.relation.sciSCIen_US
dc.collections.nameJournal Papersen_US
dc.type.rimsART-
dc.identifier.bibliographicCitationPHYSICAL REVIEW B, v.80, no.7, pp.75409 - 75409-
dc.identifier.wosid000269638900081-
dc.date.tcdate2019-01-01-
dc.citation.endPage75409-
dc.citation.number7-
dc.citation.startPage75409-
dc.citation.titlePHYSICAL REVIEW B-
dc.citation.volume80-
dc.contributor.affiliatedAuthorLee, HW-
dc.identifier.scopusid2-s2.0-70349114250-
dc.description.journalClass1-
dc.description.journalClass1-
dc.description.wostc81-
dc.type.docTypeArticle-
dc.subject.keywordPlusELECTRONIC-STRUCTURE-
dc.subject.keywordPlusGRAPHENE SHEETS-
dc.subject.keywordPlusTRANSPORT-
dc.subject.keywordPlusSTATES-
dc.relation.journalWebOfScienceCategoryMaterials Science, Multidisciplinary-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.relation.journalWebOfScienceCategoryPhysics, Condensed Matter-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaMaterials Science-
dc.relation.journalResearchAreaPhysics-

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