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Cited 147 time in webofscience Cited 150 time in scopus
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dc.contributor.authorKim, JS-
dc.contributor.authorSeo, SSA-
dc.contributor.authorChisholm, MF-
dc.contributor.authorKremer, RK-
dc.contributor.authorHabermeier, HU-
dc.contributor.authorKeimer, B-
dc.contributor.authorLee, HN-
dc.date.accessioned2015-06-25T03:06:51Z-
dc.date.available2015-06-25T03:06:51Z-
dc.date.created2010-12-17-
dc.date.issued2010-11-17-
dc.identifier.issn1098-0121-
dc.identifier.other2015-OAK-0000022461en_US
dc.identifier.urihttps://oasis.postech.ac.kr/handle/2014.oak/12227-
dc.description.abstractWe report magnetotransport properties of heterointerfaces between the Mott insulator LaTiO3 and the band insulator SrTiO3 in a delta-doping geometry. At low temperatures, we have found a strong nonlinearity in the magnetic field dependence of the Hall resistivity, which can be effectively controlled by varying the temperature and the electric field. We attribute this effect to multichannel conduction of interfacial charges generated by an electronic reconstruction. In particular, the formation of a highly mobile conduction channel revealed by our data is explained by the greatly increased dielectric permeability of SrTiO3 at low temperatures and its electric field dependence reflects the spatial distribution of the quasi-two-dimensional electron gas.-
dc.description.statementofresponsibilityopenen_US
dc.languageEnglish-
dc.publisherAMER PHYSICAL SOC-
dc.relation.isPartOfPHYSICAL REVIEW B-
dc.rightsBY_NC_NDen_US
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/2.0/kren_US
dc.titleNonlinear Hall effect and multichannel conduction in LaTiO3/SrTiO3 superlattices-
dc.typeArticle-
dc.contributor.college물리학과en_US
dc.identifier.doi10.1103/PHYSREVB.82.201407-
dc.author.googleKim, JSen_US
dc.author.googleSeo, SSAen_US
dc.author.googleLee, HNen_US
dc.author.googleKeimer, Ben_US
dc.author.googleHabermeier, HUen_US
dc.author.googleKremer, RKen_US
dc.author.googleChisholm, MFen_US
dc.relation.volume82en_US
dc.relation.issue20en_US
dc.contributor.id10202686en_US
dc.relation.journalPHYSICAL REVIEW Ben_US
dc.relation.indexSCI급, SCOPUS 등재논문en_US
dc.relation.sciSCIen_US
dc.collections.nameJournal Papersen_US
dc.type.rimsART-
dc.identifier.bibliographicCitationPHYSICAL REVIEW B, v.82, no.20-
dc.identifier.wosid000284306400005-
dc.date.tcdate2019-01-01-
dc.citation.number20-
dc.citation.titlePHYSICAL REVIEW B-
dc.citation.volume82-
dc.contributor.affiliatedAuthorKim, JS-
dc.identifier.scopusid2-s2.0-78649733669-
dc.description.journalClass1-
dc.description.journalClass1-
dc.description.wostc88-
dc.description.scptc87*
dc.date.scptcdate2018-10-274*
dc.type.docTypeArticle-
dc.subject.keywordPlusDIELECTRIC PROPERTIES-
dc.subject.keywordPlusMOTT-INSULATOR-
dc.subject.keywordPlusHETEROSTRUCTURES-
dc.subject.keywordPlusINTERFACE-
dc.subject.keywordPlusTITANATE-
dc.subject.keywordPlusOXIDES-
dc.subject.keywordPlusSRTIO3-
dc.relation.journalWebOfScienceCategoryMaterials Science, Multidisciplinary-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.relation.journalWebOfScienceCategoryPhysics, Condensed Matter-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaMaterials Science-
dc.relation.journalResearchAreaPhysics-

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