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Cited 29 time in webofscience Cited 29 time in scopus
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dc.contributor.authorDo, GS-
dc.contributor.authorKim, J-
dc.contributor.authorJhi, SH-
dc.contributor.authorPark, CH-
dc.contributor.authorLouie, SG-
dc.contributor.authorCohen, ML-
dc.date.accessioned2015-06-25T03:07:26Z-
dc.date.available2015-06-25T03:07:26Z-
dc.date.created2010-09-09-
dc.date.issued2010-08-31-
dc.identifier.issn1098-0121-
dc.identifier.other2015-OAK-0000021549en_US
dc.identifier.urihttps://oasis.postech.ac.kr/handle/2014.oak/12242-
dc.description.abstractStructural phase transitions of GeTe are studied with the use of the ab initio pseudopotential density-functional method. Transition pathways and pressures for NaCl-to-CsCl structures are investigated considering three different paths, namely, the Watanabe, Toledano, and modified Buerger pathways. Structural and electronic properties of the phases are also studied near the transition pressures. Our calculations show that GeTe exhibits very complex transition behaviors at intermediate pressures around 20 GPa, implying the existence of mixed phases in this pressure range. It is found that the Te 4d orbitals require careful treatment to properly describe the structural and electronic properties of GeTe.-
dc.description.statementofresponsibilityopenen_US
dc.languageEnglish-
dc.publisherAmerican Physical Society-
dc.relation.isPartOfPHYSICAL REVIEW B-
dc.rightsBY_NC_NDen_US
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/2.0/kren_US
dc.titleAb initio calculations of pressure-induced structural phase transitions of GeTe-
dc.typeArticle-
dc.contributor.college첨단재료과학부en_US
dc.identifier.doi10.1103/PHYSREVB.82.054121-
dc.author.googleDo, GSen_US
dc.author.googleKim, Jen_US
dc.author.googleCohen, MLen_US
dc.author.googleLouie, SGen_US
dc.author.googlePark, CHen_US
dc.author.googleJhi, SHen_US
dc.relation.volume82en_US
dc.relation.issue5en_US
dc.relation.startpage54121en_US
dc.contributor.id10136707en_US
dc.relation.journalPHYSICAL REVIEW Ben_US
dc.relation.indexSCI급, SCOPUS 등재논문en_US
dc.relation.sciSCIEen_US
dc.collections.nameJournal Papersen_US
dc.type.rimsART-
dc.identifier.bibliographicCitationPHYSICAL REVIEW B, v.82, no.5, pp.54121-
dc.identifier.wosid000281405600003-
dc.date.tcdate2019-01-01-
dc.citation.number5-
dc.citation.startPage54121-
dc.citation.titlePHYSICAL REVIEW B-
dc.citation.volume82-
dc.contributor.affiliatedAuthorJhi, SH-
dc.identifier.scopusid2-s2.0-77957355185-
dc.description.journalClass1-
dc.description.journalClass1-
dc.description.wostc17-
dc.description.scptc16*
dc.date.scptcdate2018-10-274*
dc.type.docTypeArticle-
dc.subject.keywordPlusOPTICAL-PROPERTIES-
dc.subject.keywordPlusSEMICONDUCTORS-
dc.subject.keywordPlusZNSE-
dc.subject.keywordPlusZNTE-
dc.relation.journalWebOfScienceCategoryMaterials Science, Multidisciplinary-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.relation.journalWebOfScienceCategoryPhysics, Condensed Matter-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaMaterials Science-
dc.relation.journalResearchAreaPhysics-

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