DC Field | Value | Language |
---|---|---|
dc.contributor.author | Jee, HG | - |
dc.contributor.author | Jin, KH | - |
dc.contributor.author | Han, JH | - |
dc.contributor.author | Hwang, HN | - |
dc.contributor.author | Jhi, SH | - |
dc.contributor.author | Kim, YD | - |
dc.contributor.author | Hwang, CC | - |
dc.date.accessioned | 2015-06-25T03:08:06Z | - |
dc.date.available | 2015-06-25T03:08:06Z | - |
dc.date.created | 2011-09-01 | - |
dc.date.issued | 2011-08-11 | - |
dc.identifier.issn | 1098-0121 | - |
dc.identifier.other | 2015-OAK-0000024164 | en_US |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/12259 | - |
dc.description.abstract | We present a simple but efficient way to control substrate-induced doping of graphene via mechanical deformations induced by Ar ions. Graphene on SiC is n-doped because of the substrate-to-graphene charge transfer. Using angle-resolved photoemission spectroscopy (ARPES), core level shift, and scanning tunneling microscopy (STM), the treatment with 0.5-keV Ar ions was found to reduce the charge transfer. First-principles calculations suggest that Stone-Wales defects among various defect structures are likely responsible for the change in the substrate-graphene charge transfer. | - |
dc.description.statementofresponsibility | open | en_US |
dc.language | English | - |
dc.publisher | AMER PHYSICAL SOC | - |
dc.relation.isPartOf | PHYSICAL REVIEW B | - |
dc.rights | BY_NC_ND | en_US |
dc.rights.uri | http://creativecommons.org/licenses/by-nc-nd/2.0/kr | en_US |
dc.title | Controlling the self-doping of epitaxial graphene on SiC via Ar ion treatment | - |
dc.type | Article | - |
dc.contributor.college | 첨단재료과학부 | en_US |
dc.identifier.doi | 10.1103/PHYSREVB.84.075457 | - |
dc.author.google | Jee, HG | en_US |
dc.author.google | Jin, KH | en_US |
dc.author.google | Hwang, CC | en_US |
dc.author.google | Kim, YD | en_US |
dc.author.google | Jhi, SH | en_US |
dc.author.google | Hwang, HN | en_US |
dc.author.google | Han, JH | en_US |
dc.relation.volume | 84 | en_US |
dc.relation.issue | 7 | en_US |
dc.relation.startpage | 75457 | en_US |
dc.contributor.id | 10136707 | en_US |
dc.relation.journal | PHYSICAL REVIEW B | en_US |
dc.relation.index | SCI급, SCOPUS 등재논문 | en_US |
dc.relation.sci | SCI | en_US |
dc.collections.name | Journal Papers | en_US |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | PHYSICAL REVIEW B, v.84, no.7, pp.75457 | - |
dc.identifier.wosid | 000293774400007 | - |
dc.date.tcdate | 2019-01-01 | - |
dc.citation.number | 7 | - |
dc.citation.startPage | 75457 | - |
dc.citation.title | PHYSICAL REVIEW B | - |
dc.citation.volume | 84 | - |
dc.contributor.affiliatedAuthor | Jhi, SH | - |
dc.identifier.scopusid | 2-s2.0-80052406898 | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.wostc | 15 | - |
dc.description.scptc | 14 | * |
dc.date.scptcdate | 2018-10-274 | * |
dc.type.docType | Article | - |
dc.subject.keywordPlus | HEXAGONAL BORON-NITRIDE | - |
dc.subject.keywordPlus | FILMS | - |
dc.subject.keywordPlus | GRAPHITE | - |
dc.subject.keywordPlus | SUBSTRATE | - |
dc.subject.keywordPlus | GAS | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
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