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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Jeong, D | - |
| dc.contributor.author | Choi, JH | - |
| dc.contributor.author | Lee, GH | - |
| dc.contributor.author | Jo, S | - |
| dc.contributor.author | Doh, YJ | - |
| dc.contributor.author | Lee, HJ | - |
| dc.date.accessioned | 2015-06-25T03:08:25Z | - |
| dc.date.available | 2015-06-25T03:08:25Z | - |
| dc.date.created | 2011-03-28 | - |
| dc.date.issued | 2011-03-02 | - |
| dc.identifier.issn | 1098-0121 | - |
| dc.identifier.other | 2015-OAK-0000023132 | en_US |
| dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/12268 | - |
| dc.description.abstract | Superconductor-graphene-superconductor (SGS) junction provides a unique platform to study relativistic electrodynamics of Dirac fermions in graphene combined with proximity-induced superconductivity. We report the observation of the Josephson effect in proximity-coupled superconducting junctions of graphene in contact with Pb1-xInx (x = 0.07) electrodes for temperatures as high as T = 4.8 K, with a large value of IcRN (similar to 255 mu V). This demonstrates that Pb1-xInx SGS junction would facilitate the development of the superconducting quantum information devices and superconductor-enhanced phase-coherent transport of graphene. | - |
| dc.description.statementofresponsibility | open | en_US |
| dc.language | English | - |
| dc.publisher | AMER PHYSICAL SOC | - |
| dc.relation.isPartOf | PHYSICAL REVIEW B | - |
| dc.rights | BY_NC_ND | en_US |
| dc.rights.uri | http://creativecommons.org/licenses/by-nc-nd/2.0/kr | en_US |
| dc.title | Observation of supercurrent in PbIn-graphene-PbIn Josephson junction | - |
| dc.type | Article | - |
| dc.contributor.college | 물리학과 | en_US |
| dc.identifier.doi | 10.1103/PHYSREVB.83.094503 | - |
| dc.author.google | Jeong, D | en_US |
| dc.author.google | Choi, JH | en_US |
| dc.author.google | Lee, HJ | en_US |
| dc.author.google | Doh, YJ | en_US |
| dc.author.google | Jo, S | en_US |
| dc.author.google | Lee, GH | en_US |
| dc.relation.volume | 83 | en_US |
| dc.relation.issue | 9 | en_US |
| dc.contributor.id | 10080084 | en_US |
| dc.relation.journal | PHYSICAL REVIEW B | en_US |
| dc.relation.index | SCI급, SCOPUS 등재논문 | en_US |
| dc.relation.sci | SCI | en_US |
| dc.collections.name | Journal Papers | en_US |
| dc.type.rims | ART | - |
| dc.identifier.bibliographicCitation | PHYSICAL REVIEW B, v.83, no.9 | - |
| dc.identifier.wosid | 000287911400004 | - |
| dc.date.tcdate | 2019-01-01 | - |
| dc.citation.number | 9 | - |
| dc.citation.title | PHYSICAL REVIEW B | - |
| dc.citation.volume | 83 | - |
| dc.contributor.affiliatedAuthor | Lee, GH | - |
| dc.contributor.affiliatedAuthor | Lee, HJ | - |
| dc.identifier.scopusid | 2-s2.0-79961095253 | - |
| dc.description.journalClass | 1 | - |
| dc.description.journalClass | 1 | - |
| dc.description.wostc | 57 | - |
| dc.description.scptc | 62 | * |
| dc.date.scptcdate | 2018-10-274 | * |
| dc.type.docType | Article | - |
| dc.subject.keywordPlus | QUANTUM INTERFERENCE DEVICE | - |
| dc.subject.keywordPlus | PHASE | - |
| dc.subject.keywordPlus | CONDUCTANCE | - |
| dc.subject.keywordPlus | TRANSISTORS | - |
| dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
| dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
| dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
| dc.description.journalRegisteredClass | scie | - |
| dc.description.journalRegisteredClass | scopus | - |
| dc.relation.journalResearchArea | Materials Science | - |
| dc.relation.journalResearchArea | Physics | - |
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Related Researcher
- 이후종LEE, HU JONG
- Dept of Physics