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Band-gap expansion in the surface-localized electronic structure of MoS2(0002) SCIE SCOPUS

Title
Band-gap expansion in the surface-localized electronic structure of MoS2(0002)
Authors
Han, SWCha, GBFrantzeskakis, ERazado-Colambo, IAvila, JPark, YSKim, DHwang, JKang, JSRyu, SYun, WSHong, SCAsensio, MC
Date Issued
2012-09
Publisher
American Physical Society
Abstract
The electronic band structure of MoS2 single crystals has been investigated using angle-resolved photoelectron spectroscopy and first-principles calculations. The orbital symmetry and k dispersion of these electronic states responsible for the direct and the indirect electronic band gaps have been unambiguously determined. By experimentally probing an increase of the electronic band gap, we conclude that a MoS2 (0002) surface localized state exists just below the valence band maximum at the Gamma point. This electronic state originates from the sulfur planes within the topmost layer. Our comprehensive study addresses the surface electronic structure of MoS2 and the role of van der Waals interlayer interactions.
URI
https://oasis.postech.ac.kr/handle/2014.oak/12270
DOI
10.1103/PHYSREVB.86.115105
ISSN
1098-0121
Article Type
Article
Citation
Physical Review B - Condensed Matter and Materials Physics, vol. 86, no. 11, page. 115105, 2012-09
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류순민RYU, SUNMIN
Dept of Chemistry
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