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Cited 37 time in webofscience Cited 44 time in scopus
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dc.contributor.authorKim, J-
dc.contributor.authorKim, K-
dc.contributor.authorKang, CJ-
dc.contributor.authorKim, S-
dc.contributor.authorChoi, HC-
dc.contributor.authorKang, JS-
dc.contributor.authorDenlinger, JD-
dc.contributor.authorMin, BI-
dc.date.accessioned2015-06-25T03:10:13Z-
dc.date.available2015-06-25T03:10:13Z-
dc.date.created2015-02-02-
dc.date.issued2014-08-18-
dc.identifier.issn1098-0121-
dc.identifier.other2015-OAK-0000030806en_US
dc.identifier.urihttps://oasis.postech.ac.kr/handle/2014.oak/12317-
dc.description.abstractWe have investigated the surface states of a potential mixed-valent topological insulator SmB6 based on first-principles density functional theory slab band structure analysis. We have found that metallic surface states are formed in the bulk band gap region, providing evidence for the topological insulating nature of SmB6. The obtained surface in-gap states are quite different from those in existing reports in that they are formed differently depending on the Sm or B-6 surface termination, and are composed of mainly the Sm 4f state indicating the essentiality of including f electrons in describing the surface states. We have obtained the spin chiral structures of the Fermi surfaces, which are also in accordance with the topological insulating nature of SmB6.-
dc.description.statementofresponsibilityopenen_US
dc.languageEnglish-
dc.publisherAPS-
dc.relation.isPartOfPHYSICAL REVIEW B-
dc.rightsBY_NC_NDen_US
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/2.0/kren_US
dc.titleTermination-dependent surface in-gap states in a potential mixed-valent topological insulator: SmB6-
dc.typeArticle-
dc.contributor.college물리학과en_US
dc.identifier.doi10.1103/PHYSREVB.90.075131-
dc.author.googleKim, Jen_US
dc.author.googleKim, Ken_US
dc.author.googleMin, BIen_US
dc.author.googleDenlinger, JDen_US
dc.author.googleKang, JSen_US
dc.author.googleChoi, HCen_US
dc.author.googleKim, Sen_US
dc.author.googleKang, CJen_US
dc.relation.volume90en_US
dc.relation.issue7en_US
dc.relation.startpage75131en_US
dc.relation.lastpage75131en_US
dc.contributor.id10069852en_US
dc.relation.journalPHYSICAL REVIEW Ben_US
dc.relation.indexSCI급, SCOPUS 등재논문en_US
dc.relation.sciSCIen_US
dc.collections.nameJournal Papersen_US
dc.type.rimsART-
dc.identifier.bibliographicCitationPHYSICAL REVIEW B, v.90, no.7, pp.75131 - 75131-
dc.identifier.wosid000341268600003-
dc.date.tcdate2019-01-01-
dc.citation.endPage75131-
dc.citation.number7-
dc.citation.startPage75131-
dc.citation.titlePHYSICAL REVIEW B-
dc.citation.volume90-
dc.contributor.affiliatedAuthorMin, BI-
dc.identifier.scopusid2-s2.0-84924958150-
dc.description.journalClass1-
dc.description.journalClass1-
dc.description.wostc21-
dc.description.scptc21*
dc.date.scptcdate2018-10-274*
dc.type.docTypeArticle-
dc.relation.journalWebOfScienceCategoryMaterials Science, Multidisciplinary-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.relation.journalWebOfScienceCategoryPhysics, Condensed Matter-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaMaterials Science-
dc.relation.journalResearchAreaPhysics-

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