Improvement of Performance and Stability of Sn-Based Perovskite Transistors by Salt Additives

Abstract

This doctoral thesis investigates the area of metal halide perovskites and their use in thin-film transistors (TFTs), with a specific focus on tin-based perovskite films. A significant part of the research is dedicated to addressing the inherent challenges of tin oxidation and defects at grain boundaries or surfaces, which are a consequence of the solution processing method employed in their fabrication. To overcome these obstacles, the thesis investigates the strategic integration of specific salt-based additives. These additives, upon dissolution, dissociate into cations and anions, each playing a distinct role in interacting with and rectifying defects within the perovskite structure. This approach not only simplifies the manufacturing process by obviating the need for complex additional procedures but also enables precise control over the crystallization process of the perovskite, resulting in films with enhanced uniformity and fewer defects. The core of this research explores the effects of various additives on both the morphological and electronic properties of tin-based perovskite films. The study examines how different additives impact the quality of the perovskite crystal layers, with a focus on improving film uniformity, enhancing charge carrier mobility, and reducing the incidence of defects. Additionally, the thesis places a strong emphasis on evaluating the long-term performance and environmental resilience of the transistors, particularly in terms of their ability to withstand degradation under continuous operation and exposure to ambient conditions. The ultimate objective of this research is to develop a robust, additive-based methodology for fabricating high-performance, stable tin-based perovskite TFTs that are well-suited for advanced electronic applications.