Photodetection of few-layer ReS2 based on in-plane anisotropy

Abstract

Due to the unique optoelectronic properties, 2D semiconductors are increasingly gaining attention in the field of optoelectronic applications. Utilizing polarization-sensitive semiconductors offers advantages in compactness for high-level integration and flexibility, as it provides a simple transistor architecture without the use of extra components. Among these materials, ReS2, a group VII transition metal dichalcogenide (TMDC), is widely studied for its polarization-sensitive characteristics. ReS2 possesses a 1T' lattice structure, and its distorted lattice structure imparts distinctive optical and electrical anisotropy. In contrast to other polarization-sensitive 2D materials, ReS2 allows for energy-selective control due to the presence of energy-separated exciton states. This paper explores the diverse anisotropic properties of ReS2 with a photodetector that not only exhibits energy-selective and polarization-sensitive optical anisotropy but also allows control over various parameters based on the direction of the in-plane electric field. This innovative approach facilitates a more comprehensive exploration of intrinsic anisotropy of ReS2 in the form of photocurrent.