Open Access System for Information Sharing

Login Library

 

Article
Cited 0 time in webofscience Cited 0 time in scopus
Metadata Downloads

Accurate Evaluation of Electro-Thermal Performance in Silicon Nanosheet Field-Effect Transistors with Schemes for Controlling Parasitic Bottom Transistors SCIE SCOPUS

Title
Accurate Evaluation of Electro-Thermal Performance in Silicon Nanosheet Field-Effect Transistors with Schemes for Controlling Parasitic Bottom Transistors
Authors
Jeong, JinsuLee, SangukBaek, Rock-Hyun
Date Issued
2024-06
Publisher
MDPI
Abstract
The electro-thermal performance of silicon nanosheet field-effect transistors (NSFETs) with various parasitic bottom transistor (trpbt)-controlling schemes is evaluated. Conventional punch-through stopper, trench inner-spacer (TIS), and bottom oxide (BOX) schemes were investigated from single-device to circuit-level evaluations to avoid overestimating heat's impact on performance. For single-device evaluations, the TIS scheme maintains the device temperature 59.6 and 50.4 K lower than the BOX scheme for n/pFETs, respectively, due to the low thermal conductivity of BOX. However, when the over-etched S/D recess depth (TSD) exceeds 2 nm in the TIS scheme, the RC delay becomes larger than that of the BOX scheme due to increased gate capacitance (Cgg) as the TSD increases. A higher TIS height prevents the Cgg increase and exhibits the best electro-thermal performance at single-device operation. Circuit-level evaluations are conducted with ring oscillators using 3D mixed-mode simulation. Although TIS and BOX schemes have similar oscillation frequencies, the TIS scheme has a slightly lower device temperature. This thermal superiority of the TIS scheme becomes more pronounced as the load capacitance (CL) increases. As CL increases from 1 to 10 fF, the temperature difference between TIS and BOX schemes widens from 1.5 to 4.8 K. Therefore, the TIS scheme is most suitable for controlling trpbt and improving electro-thermal performance in sub-3 nm node NSFETs.
URI
https://oasis.postech.ac.kr/handle/2014.oak/123761
DOI
10.3390/nano14121006
ISSN
2079-4991
Article Type
Article
Citation
Nanomaterials, vol. 14, no. 12, 2024-06
Files in This Item:
There are no files associated with this item.

qr_code

  • mendeley

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

Related Researcher

Researcher

백록현BAEK, ROCK HYUN
Dept of Electrical Enginrg
Read more

Views & Downloads

Browse