DC Field | Value | Language |
---|---|---|
dc.contributor.author | Quillin, Kyle | - |
dc.contributor.author | Sasidhar, K.N. | - |
dc.contributor.author | Qureshi, Muhammad Waqas | - |
dc.contributor.author | Yeom, Hwasung | - |
dc.contributor.author | Szlufarska, Izabela | - |
dc.contributor.author | Sridharan, Kumar | - |
dc.date.accessioned | 2024-08-28T01:40:08Z | - |
dc.date.available | 2024-08-28T01:40:08Z | - |
dc.date.created | 2024-08-07 | - |
dc.date.issued | 2024-10 | - |
dc.identifier.issn | 1359-6454 | - |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/124116 | - |
dc.description.abstract | Layered metal/silicon carbide (SiC) materials systems are becoming increasingly relevant to solve materials challenges in advanced fission and fusion nuclear energy systems, necessitating a deeper understanding of how interfaces between dissimilar materials behave under high energy irradiation. In this work, we use a Cr-SiC bilayer system as a model to study the behavior of such interfaces under high energy ion irradiation (80 MeV Xe26+ ions) at elevated temperatures (similar to 350 degrees C). Through high resolution characterization of the interface, we observed the formation of a nanoscale Cr-rich amorphous layer adjacent to crystalline SiC. We explain this phenomenon through a multi-scale computational approach incorporating ballistic mixing simulations, density functional theory calculations, and CALPHAD-based non-equilibrium modeling that shows the localized amorphization of Cr to be driven by the synergistic action of irradiation-induced point defects within Cr and transport of Si and C atoms across the interface. In particular, the accumulation of radiation damage results in the thermodynamic destabilization of the point-defect containing, metastable Cr-Si-C solid solution with respect to an amorphous phase of identical composition. This study advances the understanding of how metal/SiC interfaces behave under irradiation and establishes a modeling framework that can be applied to interfacial systems to understand irradiation-induced amorphization. | - |
dc.language | English | - |
dc.publisher | Elsevier BV | - |
dc.relation.isPartOf | Acta Materialia | - |
dc.title | Unusual nanoscale amorphization of metallic chromium interfacing with SiC under high energy irradiation | - |
dc.type | Article | - |
dc.identifier.doi | 10.1016/j.actamat.2024.120236 | - |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | Acta Materialia, v.278, pp.120236 | - |
dc.identifier.wosid | 001292591900001 | - |
dc.citation.startPage | 120236 | - |
dc.citation.title | Acta Materialia | - |
dc.citation.volume | 278 | - |
dc.contributor.affiliatedAuthor | Yeom, Hwasung | - |
dc.identifier.scopusid | 2-s2.0-85200559968 | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.type.docType | Article | - |
dc.subject.keywordPlus | SILICON-CARBIDE | - |
dc.subject.keywordPlus | RADIATION-DAMAGE | - |
dc.subject.keywordPlus | ION | - |
dc.subject.keywordPlus | CR | - |
dc.subject.keywordPlus | SIMULATION | - |
dc.subject.keywordPlus | DIFFUSION | - |
dc.subject.keywordPlus | SDTRIMSP | - |
dc.subject.keywordPlus | PHASES | - |
dc.subject.keywordAuthor | Amorphization | - |
dc.subject.keywordAuthor | Interfaces | - |
dc.subject.keywordAuthor | Radiation damage | - |
dc.subject.keywordAuthor | CALPHAD | - |
dc.subject.keywordAuthor | Nuclear materials | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Metallurgy & Metallurgical Engineering | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
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