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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Chon, U | - |
| dc.contributor.author | Jang, HM | - |
| dc.contributor.author | Kim, MG | - |
| dc.contributor.author | Chang, CH | - |
| dc.date.accessioned | 2015-06-25T03:13:47Z | - |
| dc.date.available | 2015-06-25T03:13:47Z | - |
| dc.date.created | 2009-02-28 | - |
| dc.date.issued | 2002-08-19 | - |
| dc.identifier.issn | 0031-9007 | - |
| dc.identifier.other | 2015-OAK-0000002834 | en_US |
| dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/12417 | - |
| dc.description.abstract | A series of titanate-based layered perovskites having large values of the spontaneous polarization P-s were developed for their applcations to nonvolatile ferroelectric random access memories. Among these, the Nd-modified bismuth titanate [Bi4-xNdxTi3O12 (BNdT)] system exhibited the most remarkable ferroelectric properties. The c-axis oriented BNdT capacitor was characterized by a switchable remanent polarization 2P(r) of over 100 muC/cm(2) and imprinting and fatigue-free behavior. The active Ti site responsible for the giant P-s was identified with the help of Rietveld analysis, x-ray absorption near-edge structure study, and ab initio quantum computations. | - |
| dc.description.statementofresponsibility | open | en_US |
| dc.language | English | - |
| dc.publisher | AMERICAN PHYSICAL SOC | - |
| dc.relation.isPartOf | PHYSICAL REVIEW LETTERS | - |
| dc.rights | BY_NC_ND | en_US |
| dc.rights.uri | http://creativecommons.org/licenses/by-nc-nd/2.0/kr | en_US |
| dc.title | Layered perovskites with giant spontaneous polarizations for nonvolatile memories | - |
| dc.type | Article | - |
| dc.contributor.college | 신소재공학과 | en_US |
| dc.identifier.doi | 10.1103/PhysRevLett.89.087601 | - |
| dc.author.google | Chon, U | en_US |
| dc.author.google | Jang, HM | en_US |
| dc.author.google | Chang, CH | en_US |
| dc.author.google | Kim, MG | en_US |
| dc.relation.volume | 89 | en_US |
| dc.relation.issue | 8 | en_US |
| dc.contributor.id | 10084272 | en_US |
| dc.relation.journal | PHYSICAL REVIEW LETTERS | en_US |
| dc.relation.index | SCI급, SCOPUS 등재논문 | en_US |
| dc.relation.sci | SCI | en_US |
| dc.collections.name | Journal Papers | en_US |
| dc.type.rims | ART | - |
| dc.identifier.bibliographicCitation | PHYSICAL REVIEW LETTERS, v.89, no.8 | - |
| dc.identifier.wosid | 000177338700052 | - |
| dc.date.tcdate | 2019-01-01 | - |
| dc.citation.number | 8 | - |
| dc.citation.title | PHYSICAL REVIEW LETTERS | - |
| dc.citation.volume | 89 | - |
| dc.contributor.affiliatedAuthor | Jang, HM | - |
| dc.identifier.scopusid | 2-s2.0-0037135775 | - |
| dc.description.journalClass | 1 | - |
| dc.description.journalClass | 1 | - |
| dc.description.wostc | 287 | - |
| dc.type.docType | Article | - |
| dc.subject.keywordPlus | BI3.25LA0.75TI3O12 THIN-FILMS | - |
| dc.subject.keywordPlus | FERROELECTRIC MEMORIES | - |
| dc.subject.keywordPlus | ELECTRICAL-PROPERTIES | - |
| dc.subject.keywordPlus | FINE-STRUCTURE | - |
| dc.subject.keywordPlus | PT/TI/SIO2/SI(100) | - |
| dc.subject.keywordPlus | TITANATE | - |
| dc.subject.keywordPlus | PHYSICS | - |
| dc.relation.journalWebOfScienceCategory | Physics, Multidisciplinary | - |
| dc.description.journalRegisteredClass | scie | - |
| dc.description.journalRegisteredClass | scopus | - |
| dc.relation.journalResearchArea | Physics | - |
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- 장현명JANG, HYUN MYUNG
- Div of Advanced Materials Science