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Highly Reliable Three-terminal Thyristor Random Access Memory with Excellent Retention Characteristics
- Title
- Highly Reliable Three-terminal Thyristor Random Access Memory with Excellent Retention Characteristics
- Date Issued
- 2021-07-01
- Publisher
- IEIE
- Article Type
- Conference
- Citation
- 2021 IEIE Summer Conference, 2021-07-01
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Related Researcher
- 백창기BAEK, CHANG KI
- Dept. Convergence IT Engineering