Spatial chemical inhomogeneity and local electronic structure of Mn-doped Ge ferromagnetic semiconductors
SCIE
SCOPUS
- Title
- Spatial chemical inhomogeneity and local electronic structure of Mn-doped Ge ferromagnetic semiconductors
- Authors
- Kang, JS; Kim, G; Wi, SC; Lee, SS; Choi, S; Cho, S; Han, SW; Kim, KH; Song, HJ; Shin, HJ; Sekiyama, A; Kasai, S; Suga, S; Min, BI
- Date Issued
- 2005-04-15
- Publisher
- AMERICAN PHYSICAL SOC
- Abstract
- We have investigated the chemical distributions and the local electronic structure of potential diluted magnetic semiconductor Ge0.94Mn0.06 single crystals using scanning photoelectron microscopy (SPEM), x-ray absorption spectroscopy (XAS), and photoemission spectroscopy (PES). The SPEM image shows the stripe-shaped microstructures, which arise from the chemical phase separation between the Mn-rich and Mn-depleted phases. The Mn 2p XAS shows that the Mn ions in the Mn-rich region are in the divalent high-spin Mn2+ states but that they do not form metallic Mn clusters. The Mn 3d PES spectrum exhibits a peak centered at similar to 4 eV below E-F and the negligible spectral weight near E-F. This study suggests that the observed ferromagnetism in Ge1-xMnx arises from the phase-separated Mn-rich phase.
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/12434
- DOI
- 10.1103/PhysRevLett.94.147202
- ISSN
- 0031-9007
- Article Type
- Article
- Citation
- PHYSICAL REVIEW LETTERS, vol. 94, no. 14, 2005-04-15
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