Open Access System for Information Sharing

Login Library

 

Article
Cited 30 time in webofscience Cited 30 time in scopus
Metadata Downloads

Electronic Instability in a Zero-Gap Semiconductor: The Charge-DensityWave in (TaSe4)(2)I SCIE SCOPUS

Title
Electronic Instability in a Zero-Gap Semiconductor: The Charge-DensityWave in (TaSe4)(2)I
Authors
Tournier-Colletta, CMoreschini, LAutes, GMoser, SCrepaldi, ABerger, HWalter, ALKim, KSBostwick, AMonceau, PRotenberg, EYazyev, OVGrioni, M
Date Issued
2013-06-04
Publisher
American Physical Society
Abstract
We report a comprehensive study of the paradigmatic quasi-1D compound (TaSe4)(2)I performed by means of angle-resolved photoemission spectroscopy (ARPES) and first-principles electronic structure calculations. We find it to be a zero-gap semiconductor in the nondistorted structure, with non-negligible interchain coupling. Theory and experiment support a Peierls-like scenario for the charge-density wave formation below T-CDW = 263 K, where the incommensurability is a direct consequence of the finite interchain coupling. The formation of small polarons, strongly suggested by the ARPES data, explains the puzzling semiconductor-to-semiconductor transition observed in transport at T-CDW.
URI
https://oasis.postech.ac.kr/handle/2014.oak/12507
DOI
10.1103/PhysRevLett.110.236401
ISSN
0031-9007
Article Type
Article
Citation
PHYSICAL REVIEW LETTERS, vol. 110, no. 23, 2013-06-04
Files in This Item:

qr_code

  • mendeley

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

Related Researcher

Views & Downloads

Browse