Electronic Instability in a Zero-Gap Semiconductor: The Charge-DensityWave in (TaSe4)(2)I
SCIE
SCOPUS
- Title
- Electronic Instability in a Zero-Gap Semiconductor: The Charge-DensityWave in (TaSe4)(2)I
- Authors
- Tournier-Colletta, C; Moreschini, L; Autes, G; Moser, S; Crepaldi, A; Berger, H; Walter, AL; Kim, KS; Bostwick, A; Monceau, P; Rotenberg, E; Yazyev, OV; Grioni, M
- Date Issued
- 2013-06-04
- Publisher
- American Physical Society
- Abstract
- We report a comprehensive study of the paradigmatic quasi-1D compound (TaSe4)(2)I performed by means of angle-resolved photoemission spectroscopy (ARPES) and first-principles electronic structure calculations. We find it to be a zero-gap semiconductor in the nondistorted structure, with non-negligible interchain coupling. Theory and experiment support a Peierls-like scenario for the charge-density wave formation below T-CDW = 263 K, where the incommensurability is a direct consequence of the finite interchain coupling. The formation of small polarons, strongly suggested by the ARPES data, explains the puzzling semiconductor-to-semiconductor transition observed in transport at T-CDW.
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/12507
- DOI
- 10.1103/PhysRevLett.110.236401
- ISSN
- 0031-9007
- Article Type
- Article
- Citation
- PHYSICAL REVIEW LETTERS, vol. 110, no. 23, 2013-06-04
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