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dc.contributor.author김영식en_US
dc.date.accessioned2014-12-01T11:47:34Z-
dc.date.available2014-12-01T11:47:34Z-
dc.date.issued2011en_US
dc.identifier.otherOAK-2014-00753en_US
dc.identifier.urihttp://postech.dcollection.net/jsp/common/DcLoOrgPer.jsp?sItemId=000001097686en_US
dc.identifier.urihttps://oasis.postech.ac.kr/handle/2014.oak/1255-
dc.descriptionMasteren_US
dc.description.abstractPhase-change RAM (PRAM) is considered to be a practical solution to address the limitations of current main memory, DRAM, e.g., power consumption and scaling limit. However, PRAM suffers from its own limitations especially due to high write latency/power and poor write endurance. Thus, it is critical to minimize writes for its widespread adoptions in the main memory. In this paper, we propose a novel cache replacement policy which exploits write coalescing and bit difference in order to minimize PRAM writes. The design-time application-specific policy takes into account both write-coalescing capability and recency in prioritizing cache lines while meeting the given performance requirement. The runtime method adjusts PRAM-awareness level as application's behavior. Experimental results show that the application-specific optimizations of proposed cache architecture give average 16.7% more reductions in PRAM writes than the existing N-chance policy while satisfying given miss ratio bound. They also show that the proposed cache replacement policy with runtime adjustment give average 11.2% more reductions in PRAM writes than N-chance policy with fix N value.en_US
dc.languageengen_US
dc.publisher포항공과대학교en_US
dc.rightsBY_NC_NDen_US
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/2.0/kren_US
dc.titleA Phase-Change RAM Aware Cache Replacement Policyen_US
dc.typeThesisen_US
dc.contributor.college일반대학원 전자전기공학과en_US
dc.date.degree2011- 8en_US
dc.type.docTypeThesis-

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