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Cited 24 time in webofscience Cited 24 time in scopus
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dc.contributor.authorKim, S-
dc.contributor.authorKang, B-
dc.contributor.authorLee, M-
dc.contributor.authorLee, SG-
dc.contributor.authorCho, K-
dc.contributor.authorYang, H-
dc.contributor.authorPark, YD-
dc.date.accessioned2015-06-25T03:32:23Z-
dc.date.available2015-06-25T03:32:23Z-
dc.date.created2015-02-04-
dc.date.issued2014-01-
dc.identifier.issn2046-2069-
dc.identifier.other2015-OAK-0000031115en_US
dc.identifier.urihttps://oasis.postech.ac.kr/handle/2014.oak/12861-
dc.description.abstractWe developed a facile post-deposition method for preparing high-performance organic transistors using direct solvent exposure. The morphological, optical, and electrical properties of poly(3-hexylthiophene) (P3HT) films were profoundly influenced by the solubility of P3HT in a solvent. Exposure to an optimized binary solvent mixture comprising methylene chloride and toluene efficiently improved the morphology and molecular ordering in a conjugated polymer thin film. The improved ordering was correlated with improved charge carrier transport in the field-effect transistors (FETs) prepared from the films. The correlation between the thin films' structural features and the electrical properties of the films guided the identification of an appropriate binary solvent mixing ratio and characterized the influence of the physical properties on the electronic properties of solvent-exposed P3HT films in an FET.-
dc.description.statementofresponsibilityopenen_US
dc.languageEnglish-
dc.publisherROYAL SOC CHEMISTRY-
dc.relation.isPartOfRSC ADVANCES-
dc.rightsBY_NC_NDen_US
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/2.0/kren_US
dc.titleSequential solvent casting for improving the structural ordering and electrical characteristics of polythiophene thin films-
dc.typeArticle-
dc.contributor.college화학공학과en_US
dc.identifier.doi10.1039/C4RA06311B-
dc.author.googleKim, Sen_US
dc.author.googleKang, Ben_US
dc.author.googlePark, YDen_US
dc.author.googleYang, Hen_US
dc.author.googleCho, Ken_US
dc.author.googleLee, SGen_US
dc.author.googleLee, Men_US
dc.relation.volume4en_US
dc.relation.issue77en_US
dc.relation.startpage41159en_US
dc.relation.lastpage41163en_US
dc.contributor.id10077904en_US
dc.relation.journalRSC ADVANCESen_US
dc.relation.indexSCI급, SCOPUS 등재논문en_US
dc.relation.sciSCIEen_US
dc.collections.nameJournal Papersen_US
dc.type.rimsART-
dc.identifier.bibliographicCitationRSC ADVANCES, v.4, no.77, pp.41159 - 41163-
dc.identifier.wosid000341938100067-
dc.date.tcdate2019-01-01-
dc.citation.endPage41163-
dc.citation.number77-
dc.citation.startPage41159-
dc.citation.titleRSC ADVANCES-
dc.citation.volume4-
dc.contributor.affiliatedAuthorCho, K-
dc.identifier.scopusid2-s2.0-84907158052-
dc.description.journalClass1-
dc.description.journalClass1-
dc.description.wostc7-
dc.description.scptc8*
dc.date.scptcdate2018-10-274*
dc.type.docTypeArticle-
dc.subject.keywordPlusFIELD-EFFECT TRANSISTORS-
dc.subject.keywordPlusHIGH-PERFORMANCE-
dc.subject.keywordPlusMOBILITY-
dc.subject.keywordPlusMORPHOLOGY-
dc.subject.keywordPlusSCATTERING-
dc.subject.keywordPlusALIGNMENT-
dc.relation.journalWebOfScienceCategoryChemistry, Multidisciplinary-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaChemistry-

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조길원CHO, KIL WON
Dept. of Chemical Enginrg
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