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Cited 12 time in webofscience Cited 12 time in scopus
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dc.contributor.authorBothara, MG-
dc.contributor.authorVijay, P-
dc.contributor.authorAtre, SV-
dc.contributor.authorPark, SJ-
dc.contributor.authorGerman, RM-
dc.contributor.authorSudarshan, TS-
dc.contributor.authorRadhakrishnan, R-
dc.date.accessioned2015-06-25T03:32:55Z-
dc.date.available2015-06-25T03:32:55Z-
dc.date.created2010-01-05-
dc.date.issued2009-05-
dc.identifier.issn0350-820X-
dc.identifier.other2015-OAK-0000019623en_US
dc.identifier.urihttps://oasis.postech.ac.kr/handle/2014.oak/12874-
dc.description.abstractPlasma pressure compaction (P(2)C) is a novel sintering technique that enables the consolidation of silicon carbide with a nanoscale microstructure at a relatively low temperature. To achieve a high final density with optimized mechanical properties, the effects of various sintering factors pertaining to the temperature-time profile and pressure were characterized. This paper reports a design of experiment approach used to optimize the processing for a 100 nm SiC powder focused on four sintering factors: temperature, time, pressure, and heating rate. Response variables included the density and mechanical properties. A L(9) orthogonal array approach that includes the signal-to-noise (SIX) ratio and analysis of variance (ANOVA) was employed to optimize the processing factors. All of the sintering factors have significant effect on the density and mechanical properties. A final density of 98.1% was achieved with a temperature of 1600 degrees C, hold time of 30 min, pressure of 50 MPa, and heating rate of 100 degrees C/min. The hardness reached 18.4 GPa with a fracture toughness of 4.6 MPa root m, and these are comparable to reports from prior studies using higher consolidation temperatures.-
dc.description.statementofresponsibilityopenen_US
dc.languageEnglish-
dc.publisherINT INST SCIENCE SINTERING (I I S S)-
dc.relation.isPartOfSCIENCE OF SINTERING-
dc.rightsBY_NC_NDen_US
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/2.0/kren_US
dc.titleDesign of Experiment Approach for Sintering Study of Nanocrystalline SiC Fabricated Using Plasma Pressure Compaction-
dc.typeArticle-
dc.contributor.college기계공학과en_US
dc.identifier.doi10.2298/SOS0902125B-
dc.author.googleBothara, MGen_US
dc.author.googleVijay, Pen_US
dc.author.googleRadhakrishnan, Ren_US
dc.author.googleSudarshan, TSen_US
dc.author.googleGerman, RMen_US
dc.author.googlePark, SJen_US
dc.author.googleAtre, SVen_US
dc.relation.volume41en_US
dc.relation.issue2en_US
dc.relation.startpage125en_US
dc.relation.lastpage133en_US
dc.contributor.id10060955en_US
dc.relation.journalSCIENCE OF SINTERINGen_US
dc.relation.indexSCI급, SCOPUS 등재논문en_US
dc.collections.nameJournal Papersen_US
dc.type.rimsART-
dc.identifier.bibliographicCitationSCIENCE OF SINTERING, v.41, no.2, pp.125 - 133-
dc.identifier.wosid000271592200003-
dc.date.tcdate2019-01-01-
dc.citation.endPage133-
dc.citation.number2-
dc.citation.startPage125-
dc.citation.titleSCIENCE OF SINTERING-
dc.citation.volume41-
dc.contributor.affiliatedAuthorPark, SJ-
dc.identifier.scopusid2-s2.0-72949118855-
dc.description.journalClass1-
dc.description.journalClass1-
dc.description.wostc9-
dc.description.scptc9*
dc.date.scptcdate2018-10-274*
dc.type.docTypeArticle-
dc.subject.keywordPlusSILICON-CARBIDE-
dc.subject.keywordPlusAL2O3 ADDITIONS-
dc.subject.keywordPlusGRAIN-SIZE-
dc.subject.keywordPlusCERAMICS-
dc.subject.keywordPlusSOLIDS-
dc.subject.keywordPlusALN-
dc.subject.keywordAuthorNanocrystalline silicon carbide (SiC)-
dc.subject.keywordAuthorPlasma Pressure Compaction (P(2)C)-
dc.subject.keywordAuthorDesign of Experiment-
dc.relation.journalWebOfScienceCategoryMaterials Science, Ceramics-
dc.relation.journalWebOfScienceCategoryMetallurgy & Metallurgical Engineering-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaMaterials Science-
dc.relation.journalResearchAreaMetallurgy & Metallurgical Engineering-

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