DC Field | Value | Language |
---|---|---|
dc.contributor.author | Moitra, A | - |
dc.contributor.author | Kim, S | - |
dc.contributor.author | Park, SJ | - |
dc.contributor.author | Kim, SG | - |
dc.contributor.author | Horstemeyer, MF | - |
dc.date.accessioned | 2015-06-25T03:32:57Z | - |
dc.date.available | 2015-06-25T03:32:57Z | - |
dc.date.created | 2012-03-08 | - |
dc.date.issued | 2011-05 | - |
dc.identifier.issn | 0350-820X | - |
dc.identifier.other | 2015-OAK-0000024854 | en_US |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/12875 | - |
dc.description.abstract | We report a first-principles calculations to study the effect of a vanadium-carbon (VC) monolayer on the adsorption process of tungsten (W) and carbon (C) atoms onto tungsten-carbide (WC) (0001) suface. The essential configuration for the study is a supercell of hexagonal WC with a (0001) surface. When adding the VC monolayer, we employed the lowest energy configuration by examining various configurations. The total energy of the system is computed as a function of the W or C adatoms' height from the surface. The adsorption of a Wand C adatom on a clean WC (0001) surface is compared with that of a W and C adatom on a WC (0001) surface with VC monolayer. The calculations show that the adsorption energy increased for both Wand C adatoms in presence of the VC monolayer. Our results provide a fundamental understanding that can explain the experimentally observed phenomena of inhibited grain growth during sintering of WC or WC-Co powders in presence of VC. | - |
dc.description.statementofresponsibility | open | en_US |
dc.language | English | - |
dc.publisher | International Institute for the Science of Sintering | - |
dc.relation.isPartOf | SCIENCE OF SINTERING | - |
dc.rights | BY_NC_ND | en_US |
dc.rights.uri | http://creativecommons.org/licenses/by-nc-nd/2.0/kr | en_US |
dc.title | The effect of vanadium-carbon monolayer on the adsorption of tungsten and carbon atoms on tungsten-carbide (0001) surface | - |
dc.type | Article | - |
dc.contributor.college | 첨단원자력공학부 | en_US |
dc.identifier.doi | 10.2298/SOS1102153M | - |
dc.author.google | Moitra, A | en_US |
dc.author.google | Kim, S | en_US |
dc.author.google | Horstemeyer, MF | en_US |
dc.author.google | Kim, SG | en_US |
dc.author.google | Park, SJ | en_US |
dc.relation.volume | 43 | en_US |
dc.relation.issue | 2 | en_US |
dc.relation.startpage | 153 | en_US |
dc.relation.lastpage | 159 | en_US |
dc.contributor.id | 10060955 | en_US |
dc.relation.journal | SCIENCE OF SINTERING | en_US |
dc.relation.index | SCI급, SCOPUS 등재논문 | en_US |
dc.relation.sci | SCIE | en_US |
dc.collections.name | Journal Papers | en_US |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | SCIENCE OF SINTERING, v.43, no.2, pp.153 - 159 | - |
dc.identifier.wosid | 000296942600005 | - |
dc.date.tcdate | 2018-03-23 | - |
dc.citation.endPage | 159 | - |
dc.citation.number | 2 | - |
dc.citation.startPage | 153 | - |
dc.citation.title | SCIENCE OF SINTERING | - |
dc.citation.volume | 43 | - |
dc.contributor.affiliatedAuthor | Park, SJ | - |
dc.identifier.scopusid | 2-s2.0-80054116452 | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.scptc | 0 | * |
dc.date.scptcdate | 2018-10-274 | * |
dc.type.docType | Article | - |
dc.subject.keywordAuthor | Sintering | - |
dc.subject.keywordAuthor | Tungsten carbide | - |
dc.subject.keywordAuthor | Vanadium carbide | - |
dc.subject.keywordAuthor | Grain growth inhibition | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Ceramics | - |
dc.relation.journalWebOfScienceCategory | Metallurgy & Metallurgical Engineering | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Metallurgy & Metallurgical Engineering | - |
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