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Cited 17 time in webofscience Cited 19 time in scopus
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dc.contributor.authorLee, D-
dc.contributor.authorMoon, K-
dc.contributor.authorPark, J-
dc.contributor.authorPark, S-
dc.contributor.authorHwang, H-
dc.date.accessioned2015-07-22T19:00:33Z-
dc.date.available2015-07-22T19:00:33Z-
dc.date.created2015-06-22-
dc.date.issued2015-03-16-
dc.identifier.issn0003-6951-
dc.identifier.other2015-OAK-0000033312en_US
dc.identifier.urihttps://oasis.postech.ac.kr/handle/2014.oak/13161-
dc.description.abstractThe characteristics of Pr0.7Ca0.3MnO3 (PCMO)-based resistive change memory were evaluated as a synapse device for a emerging computing system inspired by a biological brain. The evaluated samples structured with various reactive top electrodes exhibited a dependence on the metal-oxide free energy. More conductance states which can improve the performance of the brain-inspired computing system were achieved in a sample having a low metal-oxide free energy. During the increase and decrease in the conductance, the low metal-oxide free energy also resulted in an asymmetric conductance change leading to degradation in the computational accuracy of the brain-inspired computing system. The results demonstrated a trade-off between the number of conductance states and the variation in the conductance change in the PCMO-based synapse device. (C) 2015 AIP Publishing LLC.-
dc.description.statementofresponsibilityopenen_US
dc.languageEnglish-
dc.publisherAMER INST PHYSICS-
dc.relation.isPartOfAPPLIED PHYSICS LETTERS-
dc.rightsBY_NC_NDen_US
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/2.0/kren_US
dc.titleTrade-off between number of conductance states and variability of conductance change in Pr0.7Ca0.3MnO3-based synapse device-
dc.typeArticle-
dc.contributor.college신소재공학과en_US
dc.identifier.doi10.1063/1.4915924-
dc.author.googleLee, Den_US
dc.author.googleMoon, Ken_US
dc.author.googlePark, Jen_US
dc.author.googlePark, Sen_US
dc.author.googleHwang, Hen_US
dc.relation.volume106en_US
dc.relation.issue11en_US
dc.contributor.id10079928en_US
dc.relation.journalAPPLIED PHYSICS LETTERSen_US
dc.relation.indexSCI급, SCOPUS 등재논문en_US
dc.relation.sciSCIen_US
dc.collections.nameJournal Papersen_US
dc.type.rimsART-
dc.identifier.bibliographicCitationAPPLIED PHYSICS LETTERS, v.106, no.11-
dc.identifier.wosid000351595500057-
dc.date.tcdate2019-01-01-
dc.citation.number11-
dc.citation.titleAPPLIED PHYSICS LETTERS-
dc.citation.volume106-
dc.contributor.affiliatedAuthorHwang, H-
dc.identifier.scopusid2-s2.0-84925356870-
dc.description.journalClass1-
dc.description.journalClass1-
dc.description.wostc7-
dc.description.scptc3*
dc.date.scptcdate2018-10-274*
dc.type.docTypeArticle-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaPhysics-

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황현상HWANG, HYUNSANG
Dept of Materials Science & Enginrg
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