DC Field | Value | Language |
---|---|---|
dc.contributor.author | Choi, JH | - |
dc.contributor.author | Lee, SW | - |
dc.contributor.author | Kar, JP | - |
dc.contributor.author | Das, SN | - |
dc.contributor.author | Jeon, J | - |
dc.contributor.author | Moon, KJ | - |
dc.contributor.author | Il Lee, T | - |
dc.contributor.author | Jeong, U | - |
dc.contributor.author | Myoung, JM | - |
dc.date.accessioned | 2016-01-08T14:50:43Z | - |
dc.date.available | 2016-01-08T14:50:43Z | - |
dc.date.created | 2015-10-16 | - |
dc.date.issued | 2010-06 | - |
dc.identifier.issn | 0959-9428 | - |
dc.identifier.other | 2010-OAK-0000033685 | - |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/13445 | - |
dc.description.abstract | We suggested a facile route to fabricate top-gate random network devices of ZnO nanorods (NRs) embedded in an ion-gel dielectric layer. This route can be used for large-scale integration of ZnO NR networks. The transistors showed very good performances with low operational voltages, high field-effect mobility (similar to 1.63 cm(2) V(-1) s(-1)), and a greatly enhanced on/off ratio (similar to 10(4)). The ion-gel dielectric provided strong electrostatic doping in ZnO NRs that led to ohmic contact between ZnO and the Au electrode. A high-performance (gain similar to 12) complementary inverter was demonstrated by integrating an n-type ZnO NR network device and a p-type device based on electrospun poly(3-hexylthiophene) (P3HT) nanofibers. | - |
dc.description.statementofresponsibility | open | - |
dc.language | English | - |
dc.publisher | ROYAL SOC CHEMISTRY | - |
dc.relation.isPartOf | JOURNAL OF MATERIALS CHEMISTRY | - |
dc.subject | FIELD-EFFECT TRANSISTORS | - |
dc.subject | POLYMER | - |
dc.subject | NANOWIRES | - |
dc.subject | LOGIC | - |
dc.title | Random network transistor arrays of embedded ZnO nanorods in ion-gel gate dielectric | - |
dc.type | Article | - |
dc.contributor.college | 신소재공학과 | - |
dc.identifier.doi | 10.1039/C0JM01313G | - |
dc.author.google | Choi, JH | - |
dc.author.google | Lee, SW | - |
dc.author.google | Kar, JP | - |
dc.author.google | Das, SN | - |
dc.author.google | Jeon, J | - |
dc.author.google | Moon, KJ | - |
dc.author.google | Il Lee, T | - |
dc.author.google | Jeong, U | - |
dc.author.google | Myoung, JM | - |
dc.relation.volume | 20 | - |
dc.relation.issue | 35 | - |
dc.relation.startpage | 7393 | - |
dc.relation.lastpage | 7397 | - |
dc.contributor.id | 10174497 | - |
dc.relation.journal | JOURNAL OF MATERIALS CHEMISTRY | - |
dc.relation.sci | SCI | - |
dc.collections.name | Journal Papers | - |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | JOURNAL OF MATERIALS CHEMISTRY, v.20, no.35, pp.7393 - 7397 | - |
dc.identifier.wosid | 000281223200015 | - |
dc.date.tcdate | 2019-01-01 | - |
dc.citation.endPage | 7397 | - |
dc.citation.number | 35 | - |
dc.citation.startPage | 7393 | - |
dc.citation.title | JOURNAL OF MATERIALS CHEMISTRY | - |
dc.citation.volume | 20 | - |
dc.contributor.affiliatedAuthor | Jeong, U | - |
dc.identifier.scopusid | 2-s2.0-77955939491 | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.wostc | 23 | - |
dc.description.scptc | 24 | * |
dc.date.scptcdate | 2018-10-274 | * |
dc.type.docType | Article | - |
dc.subject.keywordPlus | FIELD-EFFECT TRANSISTORS | - |
dc.subject.keywordPlus | POLYMER | - |
dc.subject.keywordPlus | NANOWIRES | - |
dc.subject.keywordPlus | LOGIC | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Physical | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Chemistry | - |
dc.relation.journalResearchArea | Materials Science | - |
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