DC Field | Value | Language |
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dc.contributor.author | Lee, TI | - |
dc.contributor.author | Choi, WJ | - |
dc.contributor.author | Moon, KJ | - |
dc.contributor.author | Choi, JH | - |
dc.contributor.author | Park, JH | - |
dc.contributor.author | Jeong, U | - |
dc.contributor.author | Baik, HK | - |
dc.contributor.author | Myoung, JM | - |
dc.date.accessioned | 2016-01-08T14:50:47Z | - |
dc.date.available | 2016-01-08T14:50:47Z | - |
dc.date.created | 2015-10-16 | - |
dc.date.issued | 2011-06 | - |
dc.identifier.issn | 0959-9428 | - |
dc.identifier.other | 2011-OAK-0000033673 | - |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/13446 | - |
dc.description.abstract | A spontaneous assembly route to form a thin film of nanowires (NWs) was demonstrated and its feasibility was confirmed through the fabrication of a high-performance multi-Si NW field effect transistor (FET) using this route. Governed by the three mechanisms of spreading, trapping, and two-dimensional packing, the route was optimized for the concentration of Si NWs and the initial volume ratio of aqueous hydrochloride solution to isopropyl alcohol. The successfully formed Si NW thin-film was transferred on a flat polydimethylsiloxane (PDMS) mold and regulated using a repeatable conformal contact method with a new flat PDMS to prepare it for decal printing on an organic dielectric layer. Finally, after depositing the source and drain electrodes on the printed active layer, a high-performance 23-bridged Si NW FET exhibiting a mu(eff) of 51.4 cm(2) V-1 s(-1), an on/off drain current ratio of 10(5), and a V-th of 2.7 V was obtained. | - |
dc.description.statementofresponsibility | open | - |
dc.language | English | - |
dc.publisher | ROYAL SOC CHEMISTRY | - |
dc.relation.isPartOf | Journal of Materials Chemistry | - |
dc.subject | SEMICONDUCTOR NANOWIRES | - |
dc.subject | CARBON NANOTUBES | - |
dc.subject | CHEMISTRY | - |
dc.subject | GROWTH | - |
dc.subject | ZNO | - |
dc.title | A simple and rapid formation of wet chemical etched silicon nanowire films at the air–water interface | - |
dc.type | Article | - |
dc.contributor.college | 신소재공학과 | - |
dc.identifier.doi | 10.1039/C1JM12167G | - |
dc.author.google | Lee, TI | - |
dc.author.google | Choi, WJ | - |
dc.author.google | Moon, KJ | - |
dc.author.google | Choi, JH | - |
dc.author.google | Park, JH | - |
dc.author.google | Jeong, U | - |
dc.author.google | Baik, HK | - |
dc.author.google | Myoung, JM | - |
dc.relation.volume | 21 | - |
dc.relation.issue | 37 | - |
dc.relation.startpage | 14203 | - |
dc.relation.lastpage | 14208 | - |
dc.contributor.id | 10174497 | - |
dc.relation.journal | Journal of Materials Chemistry | - |
dc.relation.sci | SCI | - |
dc.collections.name | Journal Papers | - |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | Journal of Materials Chemistry, v.21, no.37, pp.14203 - 14208 | - |
dc.identifier.wosid | 000294502400015 | - |
dc.date.tcdate | 2019-01-01 | - |
dc.citation.endPage | 14208 | - |
dc.citation.number | 37 | - |
dc.citation.startPage | 14203 | - |
dc.citation.title | Journal of Materials Chemistry | - |
dc.citation.volume | 21 | - |
dc.contributor.affiliatedAuthor | Jeong, U | - |
dc.identifier.scopusid | 2-s2.0-80052548104 | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.wostc | 3 | - |
dc.description.scptc | 3 | * |
dc.date.scptcdate | 2018-10-274 | * |
dc.type.docType | Article | - |
dc.subject.keywordPlus | SEMICONDUCTOR NANOWIRES | - |
dc.subject.keywordPlus | CARBON NANOTUBES | - |
dc.subject.keywordPlus | CHEMISTRY | - |
dc.subject.keywordPlus | GROWTH | - |
dc.subject.keywordPlus | ZNO | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Physical | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Chemistry | - |
dc.relation.journalResearchArea | Materials Science | - |
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