DC Field | Value | Language |
---|---|---|
dc.contributor.author | Lee, SW | - |
dc.contributor.author | Kim, BS | - |
dc.contributor.author | Park, JJ | - |
dc.contributor.author | Hur, JH | - |
dc.contributor.author | Kim, JM | - |
dc.contributor.author | Sekitani, T | - |
dc.contributor.author | Someya, T | - |
dc.contributor.author | Jeong, U | - |
dc.date.accessioned | 2016-01-08T14:50:50Z | - |
dc.date.available | 2016-01-08T14:50:50Z | - |
dc.date.created | 2015-10-16 | - |
dc.date.issued | 2011-09 | - |
dc.identifier.issn | 0959-9428 | - |
dc.identifier.other | 2011-OAK-0000033671 | - |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/13447 | - |
dc.description.abstract | Foldable polymer thin film transistors gated by an ion gel dielectric were fabricated on a polymer substrate. Side gate structure was employed to simplify the fabrication process, which is a unique advantage of the transistors based on the ion gel dielectric. Utilizing the diffusion of crosslinkable oligomers in the P3HT thin films followed by UV gelation through a patterned mask, the ion gel made a strong bonding to the P3HT layer. Due to the deformable nature of the ion gel dielectric, the transistor arrays were electrically and mechanically stable at repeated folding events. | - |
dc.description.statementofresponsibility | open | - |
dc.language | English | - |
dc.publisher | ROYAL SOC CHEMISTRY | - |
dc.relation.isPartOf | JOURNAL OF MATERIALS CHEMISTRY | - |
dc.subject | ORGANIC TRANSISTORS | - |
dc.subject | ELASTIC CONDUCTORS | - |
dc.subject | ELECTRONICS | - |
dc.subject | SEMICONDUCTOR | - |
dc.subject | CONDUCTIVITY | - |
dc.subject | DIELECTRICS | - |
dc.subject | NANOFIBERS | - |
dc.subject | CIRCUITS | - |
dc.subject | DENSITY | - |
dc.subject | CHANNEL | - |
dc.title | High performance foldable polymer thin film transistors with a side gate architecture | - |
dc.type | Article | - |
dc.contributor.college | 신소재공학과 | - |
dc.identifier.doi | 10.1039/C1JM13079J | - |
dc.author.google | Lee, SW | - |
dc.author.google | Kim, BS | - |
dc.author.google | Park, JJ | - |
dc.author.google | Hur, JH | - |
dc.author.google | Kim, JM | - |
dc.author.google | Sekitani, T | - |
dc.author.google | Someya, T | - |
dc.author.google | Jeong, U | - |
dc.relation.volume | 21 | - |
dc.relation.issue | 46 | - |
dc.relation.startpage | 18804 | - |
dc.relation.lastpage | 18809 | - |
dc.contributor.id | 10174497 | - |
dc.relation.journal | JOURNAL OF MATERIALS CHEMISTRY | - |
dc.relation.sci | SCI | - |
dc.collections.name | Journal Papers | - |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | JOURNAL OF MATERIALS CHEMISTRY, v.21, no.46, pp.18804 - 18809 | - |
dc.identifier.wosid | 000297072000045 | - |
dc.date.tcdate | 2019-01-01 | - |
dc.citation.endPage | 18809 | - |
dc.citation.number | 46 | - |
dc.citation.startPage | 18804 | - |
dc.citation.title | JOURNAL OF MATERIALS CHEMISTRY | - |
dc.citation.volume | 21 | - |
dc.contributor.affiliatedAuthor | Jeong, U | - |
dc.identifier.scopusid | 2-s2.0-81255129288 | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.wostc | 13 | - |
dc.description.scptc | 12 | * |
dc.date.scptcdate | 2018-10-274 | * |
dc.type.docType | Article | - |
dc.subject.keywordPlus | ORGANIC TRANSISTORS | - |
dc.subject.keywordPlus | SEMICONDUCTOR | - |
dc.subject.keywordPlus | CONDUCTIVITY | - |
dc.subject.keywordPlus | DENSITY | - |
dc.subject.keywordPlus | CHANNEL | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Physical | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Chemistry | - |
dc.relation.journalResearchArea | Materials Science | - |
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.
library@postech.ac.kr Tel: 054-279-2548
Copyrights © by 2017 Pohang University of Science ad Technology All right reserved.