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MoS2 Nanosheets for Top-Gate Nonvolatile Memory Transistor Channel SCIE SCOPUS
- Title
- MoS2 Nanosheets for Top-Gate Nonvolatile Memory Transistor Channel
- Date Issued
- 2012-10-22
- Publisher
- Wiley-VCH
- ISSN
- 1613-6810
- Article Type
- Article
- Citation
- SMALL, vol. 8, no. 20, page. 3111 - 3115, 2012-10-22
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Related Researcher
- 류순민RYU, SUNMIN
- Dept of Chemistry