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Cited 183 time in webofscience Cited 191 time in scopus
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dc.contributor.authorSun, Q-
dc.contributor.authorKim, DH-
dc.contributor.authorPark, SS-
dc.contributor.authorLee, NY-
dc.contributor.authorZhang, Y-
dc.contributor.authorLee, JH-
dc.contributor.authorCho, K-
dc.contributor.authorCho, JH-
dc.date.accessioned2016-03-31T07:22:21Z-
dc.date.available2016-03-31T07:22:21Z-
dc.date.created2017-02-28-
dc.date.issued2014-07-16-
dc.identifier.issn0935-9648-
dc.identifier.other2014-OAK-0000032432-
dc.identifier.urihttps://oasis.postech.ac.kr/handle/2014.oak/13560-
dc.description.abstractA novel device architecture for preparing a transparent and low-voltage graphene pressure-sensor matrix on plastic and rubber substrates is demonstrated. The coplanar gate configuration of the graphene transistor enables a simplified procedure. The resulting devices exhibit excellent device performance, including a high transparency of ca. 80% in the visible range, a low operating voltage less than 2 V, a high pressure sensitivity of 0.12 kPa(-1), and excellent mechanical durability over 2500 cycles.-
dc.description.statementofresponsibilityX-
dc.languageEnglish-
dc.publisherWILEY-VCH-
dc.relation.isPartOfADVANCED MATERIALS-
dc.titleTransparent, Low-Power Pressure Sensor Matrix based on Coplanar-Gate Graphene Transistors-
dc.typeArticle-
dc.contributor.college화학공학과-
dc.identifier.doi10.1002/ADMA.201400918-
dc.author.googleSun, Q-
dc.author.googleKim, DH-
dc.author.googlePark, SS-
dc.author.googleLee, NY-
dc.author.googleZhang, Y-
dc.author.googleLee, JH-
dc.author.googleCho, K-
dc.author.googleCho, JH-
dc.relation.volume26-
dc.relation.issue27-
dc.relation.startpage4735-
dc.contributor.id10077904-
dc.relation.journalADVANCED MATERIALS-
dc.relation.indexSCI급, SCOPUS 등재논문-
dc.relation.sciSCI-
dc.collections.nameJournal Papers-
dc.type.rimsART-
dc.identifier.bibliographicCitationADVANCED MATERIALS, v.26, no.27, pp.4735 - 4740-
dc.identifier.wosid000339661100020-
dc.date.tcdate2019-01-01-
dc.citation.endPage4740-
dc.citation.number27-
dc.citation.startPage4735-
dc.citation.titleADVANCED MATERIALS-
dc.citation.volume26-
dc.contributor.affiliatedAuthorCho, K-
dc.identifier.scopusid2-s2.0-84904458739-
dc.description.journalClass1-
dc.description.journalClass1-
dc.description.wostc78-
dc.description.scptc61*
dc.date.scptcdate2018-05-121*
dc.type.docTypeArticle-
dc.subject.keywordPlusFIELD-EFFECT TRANSISTORS-
dc.subject.keywordPlusTHIN-FILM TRANSISTORS-
dc.subject.keywordPlusLARGE-AREA-
dc.subject.keywordPlusELECTRONIC SKIN-
dc.subject.keywordPlusDIELECTRICS-
dc.subject.keywordPlusDEVICES-
dc.relation.journalWebOfScienceCategoryChemistry, Multidisciplinary-
dc.relation.journalWebOfScienceCategoryChemistry, Physical-
dc.relation.journalWebOfScienceCategoryNanoscience & Nanotechnology-
dc.relation.journalWebOfScienceCategoryMaterials Science, Multidisciplinary-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.relation.journalWebOfScienceCategoryPhysics, Condensed Matter-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaChemistry-
dc.relation.journalResearchAreaScience & Technology - Other Topics-
dc.relation.journalResearchAreaMaterials Science-
dc.relation.journalResearchAreaPhysics-

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조길원CHO, KIL WON
Dept. of Chemical Enginrg
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