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A Repeatable Epitaxial Lift-Off Process from a Single GaAs Substrate for Low-Cost and High-Efficiency III-V Solar Cells SCIE SCOPUS
- Title
- A Repeatable Epitaxial Lift-Off Process from a Single GaAs Substrate for Low-Cost and High-Efficiency III-V Solar Cells
- Date Issued
- 2014-11-18
- Publisher
- Wiley
- Keywords
- ENHANCED DEFECT REACTIONS; GALLIUM-ARSENIDE; SI; DIFFUSION; JUNCTION; GROWTH; ZINC; PHOTOVOLTAICS; LAYERS; REUSE
- ISSN
- 1614-6840
- Article Type
- Article
- Citation
- ADVANCED ENERGY MATERIALS, vol. 4, no. 16, page. 1400589, 2014-11-18
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Related Researcher
- 주태하JOO, TAIHA
- Dept of Chemistry