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  Department of Materials Science & Engineering (신소재공학과) 1. Journal Papers

 

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Cited 38 time in webofscience Cited 33 time in scopus
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dc.contributor.authorLee, D-
dc.contributor.authorPark, J-
dc.contributor.authorPark, J-
dc.contributor.authorWoo, J-
dc.contributor.authorCha, E-
dc.contributor.authorLee, S-
dc.contributor.authorMoon, K-
dc.contributor.authorSong, J-
dc.contributor.authorKoo, Y-
dc.contributor.authorHwang, H-
dc.date.accessioned2016-03-31T07:23:44Z-
dc.date.available2016-03-31T07:23:44Z-
dc.date.created2015-02-26-
dc.date.issued2015-01-
dc.identifier.issn0935-9648-
dc.identifier.other2015-OAK-0000032343-
dc.identifier.urihttps://oasis.postech.ac.kr/handle/2014.oak/13585-
dc.description.statementofresponsibilityX-
dc.languageEnglish-
dc.publisherWiley-VCH Verlag-
dc.relation.isPartOfADVANCED MATERIALS-
dc.subjectNONVOLATILE MEMORY-
dc.subjectPERFORMANCE-
dc.subjectTRANSITION-
dc.subjectNANOCROSSBAR-
dc.subjectMECHANISM-
dc.subjectENDURANCE-
dc.titleStructurally Engineered Stackable and Scalable 3D Titanium-oxide Switching devices for High-density Nanoscale Memory-
dc.typeArticle-
dc.contributor.college신소재공학과-
dc.identifier.doi10.1002/ADMA.201403675-
dc.author.googleLee, D-
dc.author.googlePark, J-
dc.author.googleWoo, J-
dc.author.googleCha, E-
dc.author.googleLee, S-
dc.author.googleMoon, K-
dc.author.googleSong, J-
dc.author.googleKoo, Y-
dc.author.googleHwang, H-
dc.relation.volume27-
dc.relation.issue1-
dc.relation.startpage59-
dc.relation.lastpage64-
dc.contributor.id10079928-
dc.relation.journalADVANCED MATERIALS-
dc.relation.indexSCI급, SCOPUS 등재논문-
dc.relation.sciSCI-
dc.collections.nameJournal Papers-
dc.type.rimsART-
dc.identifier.bibliographicCitationADVANCED MATERIALS, v.27, no.1, pp.59 - 64-
dc.identifier.wosid000347239600008-
dc.date.tcdate2019-01-01-
dc.citation.endPage64-
dc.citation.number1-
dc.citation.startPage59-
dc.citation.titleADVANCED MATERIALS-
dc.citation.volume27-
dc.contributor.affiliatedAuthorHwang, H-
dc.identifier.scopusid2-s2.0-84920135967-
dc.description.journalClass1-
dc.description.journalClass1-
dc.description.wostc17-
dc.description.scptc9*
dc.date.scptcdate2018-05-121*
dc.type.docTypeArticle-
dc.subject.keywordPlusNONVOLATILE MEMORY-
dc.subject.keywordPlusPERFORMANCE-
dc.subject.keywordPlusTRANSITION-
dc.subject.keywordPlusNANOCROSSBAR-
dc.subject.keywordPlusMECHANISM-
dc.subject.keywordPlusENDURANCE-
dc.relation.journalWebOfScienceCategoryChemistry, Multidisciplinary-
dc.relation.journalWebOfScienceCategoryChemistry, Physical-
dc.relation.journalWebOfScienceCategoryNanoscience & Nanotechnology-
dc.relation.journalWebOfScienceCategoryMaterials Science, Multidisciplinary-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.relation.journalWebOfScienceCategoryPhysics, Condensed Matter-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaChemistry-
dc.relation.journalResearchAreaScience & Technology - Other Topics-
dc.relation.journalResearchAreaMaterials Science-
dc.relation.journalResearchAreaPhysics-
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황현상HWANG, HYUNSANG
Dept of Materials Science & Enginrg
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