DC Field | Value | Language |
---|---|---|
dc.contributor.author | Park, S | - |
dc.contributor.author | Siddik, M | - |
dc.contributor.author | Noh, J | - |
dc.contributor.author | Lee, D | - |
dc.contributor.author | Moon, K | - |
dc.contributor.author | Woo, J | - |
dc.contributor.author | Lee, BH | - |
dc.contributor.author | Hwang, H | - |
dc.date.accessioned | 2016-03-31T07:23:54Z | - |
dc.date.available | 2016-03-31T07:23:54Z | - |
dc.date.created | 2015-02-26 | - |
dc.date.issued | 2014-10 | - |
dc.identifier.issn | 0268-1242 | - |
dc.identifier.other | 2014-OAK-0000032337 | - |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/13588 | - |
dc.description.abstract | We propose a redox-based tunable memristive device for neuromorphic applications. First, we report the implementation of a 150 nm Pt/TiNx/Pr0.7Ca0.3MnO3(PCMO)/Pt memristive device with multi-level storage capability for use as an electronic synapse. In addition, we investigate the tunable memristive characteristics on Schottky barrier modulation. The Schottky barrier was formed by the interface between a TiNx electrode and a p-type PCMO. By changing the nitrogen gas flow during the reactive sputter deposition of the TiNx electrode, we have successfully engineered the Schottky barrier height, resulting in the modulation of the current and demonstrating the feasibility of tunable electronic synapses. | - |
dc.description.statementofresponsibility | X | - |
dc.language | English | - |
dc.publisher | Institute of Physics Publishing (IOP) | - |
dc.relation.isPartOf | Semiconductor Science and Technology | - |
dc.subject | memristive device | - |
dc.subject | neuromorphic device | - |
dc.subject | resistive device | - |
dc.subject | WORK FUNCTION | - |
dc.subject | SYSTEMS | - |
dc.title | A nitrogen-treated memristive device for tunable electronic synapses | - |
dc.type | Article | - |
dc.contributor.college | 신소재공학과 | - |
dc.identifier.doi | 10.1088/0268-1242/29/10/104006 | - |
dc.author.google | Park, S | - |
dc.author.google | Siddik, M | - |
dc.author.google | Noh, J | - |
dc.author.google | Lee, D | - |
dc.author.google | Moon, K | - |
dc.author.google | Woo, J | - |
dc.author.google | Lee, BH | - |
dc.author.google | Hwang, H | - |
dc.relation.volume | 29 | - |
dc.relation.issue | 10 | - |
dc.relation.startpage | 104006 | - |
dc.relation.lastpage | 104010 | - |
dc.contributor.id | 10079928 | - |
dc.relation.journal | Semiconductor Science and Technology | - |
dc.relation.index | SCI급, SCOPUS 등재논문 | - |
dc.relation.sci | SCI | - |
dc.collections.name | Journal Papers | - |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | Semiconductor Science and Technology, v.29, no.10, pp.104006 - 104010 | - |
dc.identifier.wosid | 000342389600007 | - |
dc.date.tcdate | 2019-01-01 | - |
dc.citation.endPage | 104010 | - |
dc.citation.number | 10 | - |
dc.citation.startPage | 104006 | - |
dc.citation.title | Semiconductor Science and Technology | - |
dc.citation.volume | 29 | - |
dc.contributor.affiliatedAuthor | Hwang, H | - |
dc.identifier.scopusid | 2-s2.0-84907193005 | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.wostc | 5 | - |
dc.description.scptc | 4 | * |
dc.date.scptcdate | 2018-05-121 | * |
dc.type.docType | Article | - |
dc.subject.keywordAuthor | memristive device | - |
dc.subject.keywordAuthor | neuromorphic device | - |
dc.subject.keywordAuthor | resistive device | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
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