DC Field | Value | Language |
---|---|---|
dc.contributor.author | Baek, CK | - |
dc.contributor.author | Kim, B | - |
dc.contributor.author | Son, Y | - |
dc.contributor.author | Kwon, W | - |
dc.contributor.author | Park, CK | - |
dc.contributor.author | Park, YJ | - |
dc.contributor.author | Min, HS | - |
dc.contributor.author | Kim, DM | - |
dc.date.accessioned | 2016-03-31T07:30:40Z | - |
dc.date.available | 2016-03-31T07:30:40Z | - |
dc.date.created | 2015-02-17 | - |
dc.date.issued | 2006-03 | - |
dc.identifier.issn | 0741-3106 | - |
dc.identifier.other | 2006-OAK-0000032030 | - |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/13711 | - |
dc.description.abstract | The cycling induced interface states in floating-gate EEPROM cells are reliably extracted by implementing accurate program/erase stresses in the reference cell. The interface states measured directly from the memory cell via charge pumping are shown different from those obtained conventionally from the reference cell. The reasons for these different levels of extraction are elucidated and a new method is presented for accurate determination of interface trap density. The technique is based on introducing the equivalent gate voltage with offset voltage at the reference cell by which to simulate realistically the cycling stresses as occur in the flash memory cell itself. | - |
dc.description.statementofresponsibility | X | - |
dc.language | English | - |
dc.publisher | IEEE | - |
dc.relation.isPartOf | IEEE ELECTRON DEVICE LETTERS | - |
dc.subject | charge pumping | - |
dc.subject | interface states | - |
dc.subject | flash EEPROM cell | - |
dc.title | Reliable Extraction of Cycling Induced Interface States Implementing Realistic P/E Stresses in Reference Cell: Comparison with Flash Memory Cell | - |
dc.type | Article | - |
dc.contributor.college | 창의IT융합공학과 | - |
dc.identifier.doi | 10.1109/LED.2005.864178 | - |
dc.author.google | Baek, CK | - |
dc.author.google | Kim, B | - |
dc.author.google | Son, Y | - |
dc.author.google | Kwon, W | - |
dc.author.google | Park, CK | - |
dc.author.google | Park, YJ | - |
dc.author.google | Min, HS | - |
dc.author.google | Kim, DM | - |
dc.relation.volume | 27 | - |
dc.relation.issue | 3 | - |
dc.relation.startpage | 169 | - |
dc.relation.lastpage | 171 | - |
dc.contributor.id | 10644344 | - |
dc.relation.journal | IEEE ELECTRON DEVICE LETTERS | - |
dc.relation.index | SCI급, SCOPUS 등재논문 | - |
dc.relation.sci | SCI | - |
dc.collections.name | Journal Papers | - |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | IEEE ELECTRON DEVICE LETTERS, v.27, no.3, pp.169 - 171 | - |
dc.identifier.wosid | 000235846700010 | - |
dc.date.tcdate | 2019-01-01 | - |
dc.citation.endPage | 171 | - |
dc.citation.number | 3 | - |
dc.citation.startPage | 169 | - |
dc.citation.title | IEEE ELECTRON DEVICE LETTERS | - |
dc.citation.volume | 27 | - |
dc.contributor.affiliatedAuthor | Baek, CK | - |
dc.identifier.scopusid | 2-s2.0-33644632142 | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.wostc | 3 | - |
dc.description.scptc | 4 | * |
dc.date.scptcdate | 2018-05-121 | * |
dc.type.docType | Article | - |
dc.subject.keywordAuthor | charge pumping | - |
dc.subject.keywordAuthor | interface states | - |
dc.subject.keywordAuthor | flash EEPROM cell | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Engineering | - |
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