Article
Cited 5 time in 
Cited 5 time in 
Cited 5 time in
Metadata Downloads
Full metadata record
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Lee, MJ | - |
| dc.contributor.author | Baek, CK | - |
| dc.contributor.author | Park, S | - |
| dc.contributor.author | Chung, IY | - |
| dc.contributor.author | Park, YJ | - |
| dc.date.accessioned | 2016-03-31T07:30:54Z | - |
| dc.date.available | 2016-03-31T07:30:54Z | - |
| dc.date.created | 2015-02-17 | - |
| dc.date.issued | 2009-09 | - |
| dc.identifier.issn | 0038-1101 | - |
| dc.identifier.other | 2009-OAK-0000032026 | - |
| dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/13715 | - |
| dc.description.abstract | We have experimentally analyzed the leakage mechanism by comparing the planar DRAM cell and the recently developed DRAM cell transistors that have deeply recessed channels. We have identified important differences in the leakage mechanisms between planar MOSFETs and recessed channel MOSFETs, so we can suggest guidelines with respect to the optimal device structures for the recessed channel DRAM cell. (C) 2009 Elsevier Ltd. All rights reserved. | - |
| dc.description.statementofresponsibility | X | - |
| dc.language | English | - |
| dc.publisher | Elsevier | - |
| dc.relation.isPartOf | SOLID-STATE ELECTRONICS | - |
| dc.subject | Dynamic random access memory (DRAM) | - |
| dc.subject | Recessed channel array transistor (RCAT) | - |
| dc.subject | Leakage current | - |
| dc.subject | CELL TRANSISTOR | - |
| dc.title | A Comparative Study of the DRAM Leakage Mechanism for Planar and Recessed Channel MOSFETs | - |
| dc.type | Article | - |
| dc.contributor.college | 창의IT융합공학과 | - |
| dc.identifier.doi | 10.1016/J.SSE.2009.04.011 | - |
| dc.author.google | Lee, MJ | - |
| dc.author.google | Baek, CK | - |
| dc.author.google | Park, S | - |
| dc.author.google | Chung, IY | - |
| dc.author.google | Park, YJ | - |
| dc.relation.volume | 53 | - |
| dc.relation.issue | 9 | - |
| dc.relation.startpage | 998 | - |
| dc.relation.lastpage | 1000 | - |
| dc.contributor.id | 10644344 | - |
| dc.relation.journal | SOLID-STATE ELECTRONICS | - |
| dc.relation.index | SCI급, SCOPUS 등재논문 | - |
| dc.relation.sci | SCI | - |
| dc.collections.name | Journal Papers | - |
| dc.type.rims | ART | - |
| dc.identifier.bibliographicCitation | SOLID-STATE ELECTRONICS, v.53, no.9, pp.998 - 1000 | - |
| dc.identifier.wosid | 000269091900013 | - |
| dc.date.tcdate | 2019-01-01 | - |
| dc.citation.endPage | 1000 | - |
| dc.citation.number | 9 | - |
| dc.citation.startPage | 998 | - |
| dc.citation.title | SOLID-STATE ELECTRONICS | - |
| dc.citation.volume | 53 | - |
| dc.contributor.affiliatedAuthor | Baek, CK | - |
| dc.identifier.scopusid | 2-s2.0-67651083447 | - |
| dc.description.journalClass | 1 | - |
| dc.description.journalClass | 1 | - |
| dc.description.wostc | 4 | - |
| dc.description.scptc | 4 | * |
| dc.date.scptcdate | 2018-05-121 | * |
| dc.type.docType | Article | - |
| dc.subject.keywordAuthor | Dynamic random access memory (DRAM) | - |
| dc.subject.keywordAuthor | Recessed channel array transistor (RCAT) | - |
| dc.subject.keywordAuthor | Leakage current | - |
| dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
| dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
| dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
| dc.description.journalRegisteredClass | scie | - |
| dc.description.journalRegisteredClass | scopus | - |
| dc.relation.journalResearchArea | Engineering | - |
| dc.relation.journalResearchArea | Physics | - |
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.