DC Field | Value | Language |
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dc.contributor.author | Baek, RH | - |
dc.contributor.author | BAEK, CHANG KI | - |
dc.contributor.author | Jung, SW | - |
dc.contributor.author | Yeoh, YY | - |
dc.contributor.author | Kim, DW | - |
dc.contributor.author | LEE, JEONG SOO | - |
dc.contributor.author | Kim, DM | - |
dc.contributor.author | JEONG, YOON HA | - |
dc.date.accessioned | 2016-03-31T07:31:01Z | - |
dc.date.available | 2016-03-31T07:31:01Z | - |
dc.date.created | 2010-05-27 | - |
dc.date.issued | 2010-04 | - |
dc.identifier.issn | 0021-4922 | - |
dc.identifier.other | 2010-OAK-0000032023 | - |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/13717 | - |
dc.description.abstract | The series resistance Rsd and the electron and hole mobilities, extracted from n- and p-type Si-nanowire field effect transitors (Si-NWFETs) using the Y-function technique are compared. Both n- and p-NWFETs show similar Rsd values but n-NWFETs have larger Rsd variation from device to device than p-NWFETs. Also, compared with n-NWFETs, p-NWFETs exhibit higher low-field mobility mu(0) but severe mobility degradation, regardless of channel length in the high gate voltage V-gs region. With decreasing channel length and increasing lateral electric field for a given drain voltage, n-NWFETs exhibit low-field mobility (mu(0)) degradation resulting from the velocity saturation. In contrast, the hole mobility in p-NWFETs remains nearly constant and is consistant with its larger critical electric field, E-c. (C) 2010 The Japan Society of Applied Physics | - |
dc.description.statementofresponsibility | X | - |
dc.language | English | - |
dc.publisher | The Japan society of applied physics | - |
dc.relation.isPartOf | JAPANESE JOURNAL OF APPLIED PHYSICS | - |
dc.title | Comparison of Series Resistance and Mobility Degradation Extracted from n- and p-Type Si-Nanowire Field Effect Transistors Using the Y-Function Technique | - |
dc.type | Article | - |
dc.contributor.college | 창의IT융합공학과 | - |
dc.identifier.doi | 10.1143/JJAP.49.04DN06 | - |
dc.author.google | Baek, Rock-Hyun | - |
dc.author.google | Baek, Chang-Ki | - |
dc.author.google | Jung, Sung-Woo | - |
dc.author.google | Yeoh, Yun Young | - |
dc.author.google | Kim, Dong-Won | - |
dc.author.google | Lee, Jeong-Soo | - |
dc.author.google | Kim, Dae M. | - |
dc.author.google | Jeong, Yoon-Ha | - |
dc.relation.volume | 49 | - |
dc.relation.issue | 4 | - |
dc.contributor.id | 10644344 | - |
dc.relation.journal | JAPANESE JOURNAL OF APPLIED PHYSICS | - |
dc.relation.index | SCI급, SCOPUS 등재논문 | - |
dc.relation.sci | SCI | - |
dc.collections.name | Journal Papers | - |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | JAPANESE JOURNAL OF APPLIED PHYSICS, v.49, no.4, pp.4DN06-01 - 4DN06-05 | - |
dc.identifier.wosid | 000277301300234 | - |
dc.date.tcdate | 2019-01-01 | - |
dc.citation.endPage | 4DN06-05 | - |
dc.citation.number | 4 | - |
dc.citation.startPage | 4DN06-01 | - |
dc.citation.title | JAPANESE JOURNAL OF APPLIED PHYSICS | - |
dc.citation.volume | 49 | - |
dc.contributor.affiliatedAuthor | Baek, RH | - |
dc.contributor.affiliatedAuthor | BAEK, CHANG KI | - |
dc.contributor.affiliatedAuthor | LEE, JEONG SOO | - |
dc.contributor.affiliatedAuthor | JEONG, YOON HA | - |
dc.identifier.scopusid | 2-s2.0-77952681042 | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.wostc | 3 | - |
dc.description.scptc | 4 | * |
dc.date.scptcdate | 2018-05-121 | * |
dc.type.docType | Article; Proceedings Paper | - |
dc.subject.keywordPlus | INVERSION-LAYERS | - |
dc.subject.keywordPlus | PERFORMANCE | - |
dc.subject.keywordPlus | CHANNEL | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Physics | - |
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