Simple formation method of vanadium oxide films with gap states for application in organic optoelectronics
SCIE
SCOPUS
- Title
- Simple formation method of vanadium oxide films with gap states for application in organic optoelectronics
- Authors
- Sungjun Kim; Ki Hyun Hong; Kim, K; Illhwan Lee; Lee, JL
- Date Issued
- 2014-09
- Publisher
- ELSIVIER
- Abstract
- The simple and cost-effective method to form vanadium oxides (VOx) with high density of gap-states and role of gap-states for organic electronics were investigated. The percentage of V2O5 decreased from 82.7% to 29.3% as the deposition rate increased from 0.1 to 1.0 angstrom/s in thermal evaporation. Synchrotron radiation photo emission spectroscopy revealed that a number of gap states relating to oxygen vacancies was induced near the Fermi level, transporting charges and lowering the hole injection barrier from 0.92 to 0.67 eV. As a result, the operation voltage at 1 mA/cm(2) was reduced from 8.3 to 5.2 V (C) 2014 Elsevier B.V. All rights reserved.
- Keywords
- Gap states; Vanadium oxides; Organic light emitting diodes; LIGHT-EMITTING-DIODES; ANODE; INTERFACE; INJECTION; LAYER
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/13785
- DOI
- 10.1016/J.ORGEL.2014.05.005
- ISSN
- 1566-1199
- Article Type
- Article
- Citation
- ORGANIC ELECTRONICS, vol. 15, no. 9, page. 2043 - 2051, 2014-09
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- There are no files associated with this item.
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