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Cited 25 time in webofscience Cited 32 time in scopus
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dc.contributor.authorLee, SH-
dc.contributor.authorLee, SK-
dc.contributor.authorKim, B-
dc.contributor.authorPark, HJ-
dc.contributor.authorSim, JY-
dc.date.accessioned2016-03-31T07:36:22Z-
dc.date.available2016-03-31T07:36:22Z-
dc.date.created2016-02-22-
dc.date.issued2014-09-
dc.identifier.issn0018-9200-
dc.identifier.other2014-OAK-0000031731-
dc.identifier.urihttps://oasis.postech.ac.kr/handle/2014.oak/13814-
dc.description.abstractAn energy-efficient 3 Gb/s current-mode interface scheme is proposed for on-chip global interconnects and silicon interposer channels. The transceiver core consists of an open-drain transmitter with one-tap pre-emphasis and a current sense amplifier load as the receiver. The current sense amplifier load is formed by stacking a PMOS diode stage and a cross-coupled NMOS stage, providing an optimum current-mode receiver without any bias current. The proposed scheme is verified with two cases of transceivers implemented in 65 nm CMOS. A 10 mm point-to-point data-only channel shows an energy efficiency of 9.5 fJ/b/mm, and a 20 mm four-drop source-synchronous link achieves 29.4 fJ/b/mm including clock and data channels.-
dc.description.statementofresponsibilityX-
dc.languageEnglish-
dc.publisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC-
dc.relation.isPartOfIEEE JOURNAL OF SOLID-STATE CIRCUITS-
dc.titleCurrent-Mode Transceiver for Silicon Interposer Channel-
dc.typeArticle-
dc.contributor.college전자전기공학과-
dc.identifier.doi10.1109/JSSC.2014.2336213-
dc.author.googleLee, SH-
dc.author.googleLee, SK-
dc.author.googleKim, B-
dc.author.googlePark, HJ-
dc.author.googleSim, JY-
dc.relation.volume49-
dc.relation.issue9-
dc.relation.startpage2044-
dc.relation.lastpage2053-
dc.contributor.id11082511-
dc.relation.journalIEEE JOURNAL OF SOLID-STATE CIRCUITS-
dc.relation.indexSCI급, SCOPUS 등재논문-
dc.relation.sciSCI-
dc.collections.nameJournal Papers-
dc.type.rimsART-
dc.identifier.bibliographicCitationIEEE JOURNAL OF SOLID-STATE CIRCUITS, v.49, no.9, pp.2044 - 2053-
dc.identifier.wosid000341564200016-
dc.date.tcdate2019-01-01-
dc.citation.endPage2053-
dc.citation.number9-
dc.citation.startPage2044-
dc.citation.titleIEEE JOURNAL OF SOLID-STATE CIRCUITS-
dc.citation.volume49-
dc.contributor.affiliatedAuthorLee, SK-
dc.contributor.affiliatedAuthorKim, B-
dc.contributor.affiliatedAuthorPark, HJ-
dc.contributor.affiliatedAuthorSim, JY-
dc.identifier.scopusid2-s2.0-84906949164-
dc.description.journalClass1-
dc.description.journalClass1-
dc.description.wostc15-
dc.description.scptc18*
dc.date.scptcdate2018-05-121*
dc.description.isOpenAccessN-
dc.type.docTypeArticle-
dc.subject.keywordAuthorMemory interface-
dc.subject.keywordAuthoron-chip link-
dc.subject.keywordAuthorsilicon interposer-
dc.subject.keywordAuthortransceiver-
dc.subject.keywordAuthorwireline-
dc.relation.journalWebOfScienceCategoryEngineering, Electrical & Electronic-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-

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김병섭KIM, BYUNGSUB
Dept of Electrical Enginrg
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