DC Field | Value | Language |
---|---|---|
dc.contributor.author | Xu, W | - |
dc.contributor.author | Lim, TS | - |
dc.contributor.author | Seo, HK | - |
dc.contributor.author | Min, SY | - |
dc.contributor.author | Cho, H | - |
dc.contributor.author | Park, MH | - |
dc.contributor.author | Kim, YH | - |
dc.contributor.author | Lee, TW | - |
dc.date.accessioned | 2016-03-31T07:37:48Z | - |
dc.date.available | 2016-03-31T07:37:48Z | - |
dc.date.created | 2015-02-04 | - |
dc.date.issued | 2014-05-28 | - |
dc.identifier.issn | 1613-6810 | - |
dc.identifier.other | 2014-OAK-0000031665 | - |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/13840 | - |
dc.description.abstract | Although graphene can be easily p-doped by various adsorbates, developing stable n-doped graphene that is very useful for practical device applications is a difficult challenge. We investigated the doping effect of solution-processed (4-(1,3-dimethyl-2,3-dihydro-1H-benzoimidazol-2-yl)phenyl)dimethylamine (N-DMBI) on chemical-vapor-deposited (CVD) graphene. Strong n-type doping is confirmed by Raman spectroscopy and the electrical transport characteristics of graphene field-effect transistors. The strong n-type doping effect shifts the Dirac point to around -140 V. Appropriate annealing at a low temperature of 80 oC enables an enhanced electron mobility of 1150 cm(2) V-1 s(-1). The work function and its uniformity on a large scale (1.2 mm x 1.2 mm) of the doped surface are evaluated using ultraviolet photoelectron spectroscopy and Kelvin probe mapping. Stable electrical properties are observed in a device aged in air for more than one month. | - |
dc.description.statementofresponsibility | X | - |
dc.language | English | - |
dc.publisher | WILEY-V C H VERLAG GMBH | - |
dc.relation.isPartOf | SMALL | - |
dc.subject | n-type doping | - |
dc.subject | graphene field-effect transistor | - |
dc.subject | carrier mobility | - |
dc.subject | dirac point | - |
dc.subject | MOLECULAR CHARGE-TRANSFER | - |
dc.subject | LIGHT-EMITTING-DIODES | - |
dc.subject | TRANSPARENT ELECTRODES | - |
dc.subject | CARBON NANOTUBES | - |
dc.subject | RECENT PROGRESS | - |
dc.subject | LAYER GRAPHENE | - |
dc.subject | WORK-FUNCTION | - |
dc.subject | NANORIBBONS | - |
dc.subject | GROWTH | - |
dc.subject | FABRICATION | - |
dc.title | N-Doped Graphene Field-Effect Transistors with Enhanced Electron Mobility and Air-Stability | - |
dc.type | Article | - |
dc.contributor.college | 신소재공학과 | - |
dc.identifier.doi | 10.1002/SMLL.201303768 | - |
dc.author.google | Xu, W | - |
dc.author.google | Lim, TS | - |
dc.author.google | Seo, HK | - |
dc.author.google | Min, SY | - |
dc.author.google | Cho, H | - |
dc.author.google | Park, MH | - |
dc.author.google | Kim, YH | - |
dc.author.google | Lee, TW | - |
dc.relation.volume | 10 | - |
dc.relation.issue | 10 | - |
dc.relation.startpage | 1999 | - |
dc.relation.lastpage | 2005 | - |
dc.contributor.id | 10154218 | - |
dc.relation.journal | SMALL | - |
dc.relation.index | SCI급, SCOPUS 등재논문 | - |
dc.relation.sci | SCI | - |
dc.collections.name | Journal Papers | - |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | SMALL, v.10, no.10, pp.1999 - 2005 | - |
dc.identifier.wosid | 000336611000017 | - |
dc.date.tcdate | 2019-01-01 | - |
dc.citation.endPage | 2005 | - |
dc.citation.number | 10 | - |
dc.citation.startPage | 1999 | - |
dc.citation.title | SMALL | - |
dc.citation.volume | 10 | - |
dc.contributor.affiliatedAuthor | Lee, TW | - |
dc.identifier.scopusid | 2-s2.0-84901280757 | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.wostc | 43 | - |
dc.description.scptc | 37 | * |
dc.date.scptcdate | 2018-05-121 | * |
dc.type.docType | Article | - |
dc.subject.keywordPlus | CARBON NANOTUBES | - |
dc.subject.keywordPlus | RECENT PROGRESS | - |
dc.subject.keywordPlus | LAYER GRAPHENE | - |
dc.subject.keywordPlus | WORK-FUNCTION | - |
dc.subject.keywordPlus | NANORIBBONS | - |
dc.subject.keywordPlus | GROWTH | - |
dc.subject.keywordPlus | FABRICATION | - |
dc.subject.keywordAuthor | n-type doping | - |
dc.subject.keywordAuthor | graphene field-effect transistor | - |
dc.subject.keywordAuthor | carrier mobility | - |
dc.subject.keywordAuthor | dirac point | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Physical | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Chemistry | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
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