DC Field | Value | Language |
---|---|---|
dc.contributor.author | Jeong, YJ | - |
dc.contributor.author | Jang, J | - |
dc.contributor.author | Nam, S | - |
dc.contributor.author | Kim, K | - |
dc.contributor.author | Kim, LH | - |
dc.contributor.author | Park, S | - |
dc.contributor.author | An, TK | - |
dc.contributor.author | Park, CE | - |
dc.date.accessioned | 2016-03-31T07:52:10Z | - |
dc.date.available | 2016-03-31T07:52:10Z | - |
dc.date.created | 2015-02-04 | - |
dc.date.issued | 2014-05-14 | - |
dc.identifier.issn | 1944-8244 | - |
dc.identifier.other | 2014-OAK-0000031086 | - |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/14099 | - |
dc.description.abstract | Chemical vapor deposition-grown graphene has been an attractive electrode material for organic electronic devices, such as organic field-effect transistors (OFETs), because it is highly conductive and provides good oxidation and thermal stability properties. However, it still remains a challenge to demonstrate organic complementary circuits using graphene electrodes because of the relatively poor performance of n-type OFETs. Here, we report the development of high-performance organic complementary inverters using graphene as source/drain electrodes and N, N'-ditridecyl-3,4,9,10-perylenetetracarboxylic diimide (PTCDI-C13) and pentacene as n- and p-type organic semiconductors, respectively. Graphene electrodes were n-doped via the formation of NH2-terminated self-assembled monolayers that lowered the work function and the electron injection barrier between the graphene and PTCDI-C13. Thermal annealing improved the molecular packing among PTCDI-C13 groups on the graphene surface, thereby increasing the crystallinity and grain size. The thermally annealed PTCDI-C13 OFETs prepared using n-doped graphene electrodes exhibited a good field-effect mobility of up to 0.43 cm(2)/(V s), which was comparable to the values obtained from other p-type pentacene OFETs. By integrating p- and n-type OFETs, we successfully fabricated organic complementary inverters that exhibited highly symmetric operation with an excellent voltage gain of up to 124 and good noise margin. | - |
dc.description.statementofresponsibility | X | - |
dc.language | English | - |
dc.publisher | AMER CHEMICAL SOC | - |
dc.relation.isPartOf | ACS APPLIED MATERIALS & INTERFACES | - |
dc.subject | graphene | - |
dc.subject | chemical vapor deposition | - |
dc.subject | n-type organic semiconductors | - |
dc.subject | organic complementary inverters | - |
dc.subject | work function | - |
dc.subject | thermal annealing | - |
dc.subject | FIELD-EFFECT TRANSISTORS | - |
dc.subject | SELF-ASSEMBLED MONOLAYERS | - |
dc.subject | GATE DIELECTRICS | - |
dc.subject | HIGH-MOBILITY | - |
dc.subject | CIRCUITS | - |
dc.subject | SEMICONDUCTORS | - |
dc.subject | POLYMER | - |
dc.subject | FILMS | - |
dc.subject | ENHANCEMENT | - |
dc.subject | STABILITY | - |
dc.title | High-Performance Organic Complementary Inverters Using Monolayer Graphene Electrodes | - |
dc.type | Article | - |
dc.contributor.college | 화학공학과 | - |
dc.identifier.doi | 10.1021/AM500618G | - |
dc.author.google | Jeong, YJ | - |
dc.author.google | Jang, J | - |
dc.author.google | Nam, S | - |
dc.author.google | Kim, K | - |
dc.author.google | Kim, LH | - |
dc.author.google | Park, S | - |
dc.author.google | An, TK | - |
dc.author.google | Park, CE | - |
dc.relation.volume | 6 | - |
dc.relation.issue | 9 | - |
dc.relation.startpage | 6816 | - |
dc.relation.lastpage | 6824 | - |
dc.contributor.id | 10104044 | - |
dc.relation.journal | ACS APPLIED MATERIALS & INTERFACES | - |
dc.relation.index | SCI급, SCOPUS 등재논문 | - |
dc.relation.sci | SCI | - |
dc.collections.name | Journal Papers | - |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | ACS APPLIED MATERIALS & INTERFACES, v.6, no.9, pp.6816 - 6824 | - |
dc.identifier.wosid | 000336075300098 | - |
dc.date.tcdate | 2019-01-01 | - |
dc.citation.endPage | 6824 | - |
dc.citation.number | 9 | - |
dc.citation.startPage | 6816 | - |
dc.citation.title | ACS APPLIED MATERIALS & INTERFACES | - |
dc.citation.volume | 6 | - |
dc.contributor.affiliatedAuthor | Park, CE | - |
dc.identifier.scopusid | 2-s2.0-84900847460 | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.wostc | 20 | - |
dc.description.scptc | 19 | * |
dc.date.scptcdate | 2018-05-121 | * |
dc.type.docType | Article | - |
dc.subject.keywordPlus | FIELD-EFFECT TRANSISTORS | - |
dc.subject.keywordPlus | SELF-ASSEMBLED MONOLAYERS | - |
dc.subject.keywordPlus | GATE DIELECTRICS | - |
dc.subject.keywordPlus | HIGH-MOBILITY | - |
dc.subject.keywordPlus | CIRCUITS | - |
dc.subject.keywordPlus | SEMICONDUCTORS | - |
dc.subject.keywordPlus | POLYMER | - |
dc.subject.keywordPlus | FILMS | - |
dc.subject.keywordPlus | ENHANCEMENT | - |
dc.subject.keywordPlus | STABILITY | - |
dc.subject.keywordAuthor | graphene | - |
dc.subject.keywordAuthor | chemical vapor deposition | - |
dc.subject.keywordAuthor | n-type organic semiconductors | - |
dc.subject.keywordAuthor | organic complementary inverters | - |
dc.subject.keywordAuthor | work function | - |
dc.subject.keywordAuthor | thermal annealing | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Materials Science | - |
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